INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC5064
DESCRIPTION
·Low
Noise and High Gain
NF = 1.1 dB TYP.,
︱
S
21e
︱
2
= 12 dB TYP.
@V
CE
= 5 V, f = 1.0 GHz
APPLICATIONS
·Designed
for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CEO
Collector-Emitter Voltage
12
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Collector Current-Continuous
30
mA
I
B
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
15
mA
P
C
0.15
W
T
J
125
℃
T
stg
Storage Temperature Range
-55~125
℃
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC5064
TYP.
MAX
UNIT
I
CBO
Collector Cutoff Current
V
CB
= 10V; I
E
= 0
1.0
μA
I
EBO
Emitter Cutoff Current
V
EB
= 1V; I
C
= 0
1.0
μA
h
FE
DC Current Gain
I
C
= 10mA ; V
CE
= 5V
80
240
f
T
Current-Gain—Bandwidth Product
I
C
= 10mA ; V
CE
= 5V
5
7
GHz
C
re
C
OB
︱
S
21e
︱
2
︱
S
21e
︱
2
NF
Feed-Back Capacitance
I
E
= 0 ; V
CB
= 5V; f= 1.0MHz
0.45
0.9
pF
Output Capacitance
I
E
= 0 ; V
CB
= 5V; f= 1.0MHz
0.7
pF
Insertion Power Gain
I
C
= 10mA ; V
CE
= 5V;f= 500MHz
17
dB
Insertion Power Gain
I
C
= 10mA ; V
CE
= 5V;f= 1.0GHz
8.5
12
dB
Noise Figure
I
C
= 3mA ; V
CE
= 5V;f= 500MHz
1
dB
NF
Noise Figure
I
C
= 3mA ; V
CE
= 5V;f= 1.0GHz
1.1
2.0
dB
h
FE
Classification
O
80-160
Y
120-240
isc website：www.iscsemi.cn
2
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC5064
isc website：www.iscsemi.cn
3
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC5064
S-PARAMETER
V
CE
= 5 V, I
C
= 5 mA, Z
O
= 50Ω
Freque.
MHz
200
400
600
800
1000
1200
1400
1600
1800
2000
MAG.
0.753
0.531
0.384
0.305
0.255
0.224
0.203
0.187
0.174
0.176
S
11
ANG.
-43.7
-75.1
-96.4
-112.6
-126.3
-138.4
-150.1
-159.4
-166.5
-171.2
MAG.
10.247
7.684
5.815
4.532
3.788
3.244
2.833
2.529
2.283
2.107
S
21
ANG.
140.6
117.2
103.0
93.6
86.3
80.7
75.4
70.6
66.7
63.0
MAG.
0.040
0.060
0.074
0.086
0,099
0,112
0.127
0,139
0,150
0,164
S
12
ANG.
65.6
57.1
56.1
57.0
58.9
60.2
60.3
60.0
60.3
59.2
MAG.
0.827
0.648
0.551
0.500
0.472
0.455
0.442
0.434
0.429
0.428
S
22
ANG.
-22.6
-30.3
-32.0
-32.3
-32.4
-32.2
-32.6
-33.0
-32.6
-32.2
isc website：www.iscsemi.cn
4
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
V
CE
= 5 V, I
C
= 10 mA, Z
O
= 50Ω
Freque.
MHz
200
400
600
800
1000
1200
1400
1600
1800
2000
MAG.
0.591
0.367
0.260
0.209
0.178
0.160
0.150
0.141
0.130
0.133
2SC5064
S
11
ANG.
-58.0
-90.3
-110.7
-126.9
-141.8
-153.7
-166.3
-175.2
178.2
174.0
MAG.
14.955
9.581
6.781
5.207
4.269
3.618
3.152
2.801
2.521
2.314
S
21
ANG.
129.6
107.5
96.1
88.6
82.5
77.7
72.7
68.7
65.0
61.7
MAG.
0.034
0.052
0.067
0.083
0.100
0.117
0.135
0.149
0.163
0.179
S
12
ANG.
64.3
61.9
63.9
65.2
66.4
66.7
65.4
64.0
63.4
61.3
MAG.
0.714
0.534
0.462
0.428
0.412
0.403
0.398
0.393
0.392
0.395
S
22
ANG.
-27.5
-30.8
-30.1
-29.2
-28.6
-28.3
-28.8
-29.4
-29.0
-28.6
isc website：www.iscsemi.cn
5
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