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FCP25N60N

Description
N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ
File Size448KB,8 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

FCP25N60N Overview

N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ

FCP25N60N_F102 N-Channel MOSFET
March 2013
FCP25N60N_F102
600 V, 25 A, 125 mΩ
Features
N-Channel SupreMOS
®
MOSFET
Description
The SupreMOS
®
MOSFET is Fairchild Semiconductor
®
’s next-
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiate it from
the conventional MOSFETs. This advanced technology and pre-
cise process control provide lowest Rsp on-resistance, superior
switching performance and ruggedness. SupreMOS MOSFET is
suitable for high frequency switching power converter applica-
tions such as PFC, server/telecom power, FPD TV power, ATX
power and industrial power applications.
• R
DS(on)
= 107 mΩ (Typ.)@ V
GS
= 10 V, I
D
= 12.5 A
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. C
oss
.eff = 262 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Solar Inverter
• AC-DC Power Supply
D
G
G D S
TO-220
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(T
C
= 25
o
C)
Derate above 25 C
o
Parameter
FCP25N60N_F102
600
±30
25
o
C)
o
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
Continuous (T
C
=
Pulsed
25
16
(Note 1)
(Note 2)
75
861
8.3
2.2
(Note 3)
20
100
216
1.72
-55 to +150
300
Continuous (T
C
= 100 C)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
FCP25N60N_F102
0.58
0.5
62.5
o
Unit
C/W
©2010 Fairchild Semiconductor Corporation
FCP25N60N_F102 Rev. C0
1
www.fairchildsemi.com
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