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2SC4901

Description
High Gain Bandwidth Product
File Size173KB,5 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SC4901 Overview

High Gain Bandwidth Product

INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC4901
DESCRIPTION
·High
Gain Bandwidth Product
f
T
= 9 GHz TYP.
·High
gain, low noise figure
PG = 13.0 dB TYP., NF = 1.2 dB TYP. @ f = 900 MHz
APPLICATIONS
·Designed
for VHF, UHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
15
V
V
CEO
Collector-Emitter Voltage
9
V
V
EBO
Emitter-Base Voltage
1.5
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
50
mA
P
C
0.1
W
T
J
150
T
stg
Storage Temperature Range
-55~150
isc website:www.iscsemi.cn
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