Schottky Barrier Rectifiers
SR1030-G Thru. SR10200-G
Forward current: 10A
Reverse voltage: 30 to 200V
RoHS Device
Features
-Metal of silicon rectifier , majority carrier conduction.
-Guard ring for transient protection.
-Low Power Loss / High Efficiency.
-High current capability , low VF.
-High surge capacity.
-For use in low voltage , high frequency inverters ,
free wheeling,and polarity protection applications.
0.610(15.50)
0.583(14.80)
0.04 MAX
(1.0)
0.270(6.90)
0.230(5.80)
0.135(3.44)
0.103(2.62)
0.413(10.50)
0.374( 9.50)
0.153(3.90)
0.146(3.70)
TO-220AC
0.189(4.80)
0.173(4.40)
0.055(1.40)
0.047(1.20)
Mechanical data
-Case: TO-220AC, molded plastic.
-Epoxy: UL 94V-0 rate flame retardant.
-Polarity: As marked on the body.
-Mounting position: Any
-Weight: 2.24 grams
Dimensions in inches and (millimeter)
0.057(1.45)
0.045(1.14)
0.177 0.583(14.80)
(4.50) 0.531(13.50)
MAX.
0.043(1.10)
0.032(0.80)
0.102(2.60)
0.091(2.30)
0.024(0.60)
0.012(0.30)
0.138
MAX.
(3.50)
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Characteristics
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
( See Fig.1 ) @T
C
=95°C
Peak forward surge current, 8.3ms single
half sine-wave super imposed on rated load
(JEDEC method)
Peak forward voltage at 10.0A DC (Note 1)
Maximum DC reverse current
at rated DC blocking voltage
@T
J
=25°C
@T
J
=100°C
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
SR10
30-G
30
21
30
SR10
40-G
40
28
40
SR10
50-G
50
35
50
SR10
60-G
60
42
60
10.0
SR10
80-G
80
56
80
SR10
100-G
100
70
100
SR10
150-G
150
105
150
SR10
200-G
200
140
200
Unit
V
V
V
A
I
FSM
175
A
V
F
I
R
C
J
R
θJC
T
J
T
STG
0.55
0.70
1.0
50
500
2.5
-55 ~ +125
-55 ~ +150
0.85
0.95
V
mA
pF
°C/W
°C
°C
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating temperature range
Storage temperature range
NOTES: 1. 1.300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case.
Company reserves the right to improve product design , functions and reliability without notice.
QW-BB031
REV:B
Page 1
Comchip Technology CO., LTD.
Schottky Barrier Rectifiers
RATING AND CHARACTERISTIC CURVES (SR1030-G Thru. SR10200-G)
Fig.1 Forward Current Derating Curve
12.0
300
Fig.2 Max. Non-repetitive Surge Current
Peak Forward Surge Current, (A)
Average Forward Current, (A)
10.0
8.0
6.0
4.0
2.0
0
0
25
50
75
100
125
150
175
Single phase
Half wave, 60Hz
Resistive or
inductive load
0.375"(9.5mm)
lead length
250
200
150
100
50
0
0
10
Pulse width 8.3ms
single half sine-wave
(JEDEC Method)
100
Ambient Temperature, (°C)
Number of Cycles at 60Hz
Fig.3 Typical Reverse Characteristics
100
100
Fig.4 Typical Forward Characteristics
T
J
=25°C
Pulse width 300us
2% Duty cycle
Instantaneous Reverse Current, (mA)
Instantaneous Forward Current, (A)
04
0-
G
SR
1
0-
G
06
-G
10
T
J
=100°C
30
SR
1
10
0-
G
~
10
SR
1
1.0
T
J
=75°C
1
SR
05
08
SR
G
0-
~
SR
1
10
00
-G
~
1.0
SR
1
10
50
-G
~
SR
1
0
02
0-
G
0.1
T
J
=25°C
0.01
0
0.1
20
40
60
80
100
120
140
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Percent or Rated Peak Reverse Voltage, (%)
Instantaneous Forward Voltage, (V)
Fig.5 Typical Junction Capacitance
100
Capacitacne, (pF)
10
T
J
=25°C
f=1MHz
1
0.1
1
10
100
Reverse Voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BB031
REV:B
Page 2
Comchip Technology CO., LTD.
Wireless Connectivity
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