The DG3535/DG3536 has on-resistance matching (less
than 0.05
Ω
at 2.7 V) and flatness (less than 0.2
Ω
at 2.7 V)
that are guaranteed over the entire voltage range.
Additionally, low logic thresholds makes the DG3535/
DG3536 an ideal interface to low voltage DSP control
signals.
The DG3535/DG3536 has fast switching speed with break-
before-make guaranteed. In the On condition, all switching
elements conduct equally in both directions. Off-isolation
and crosstalk is
-
69 dB at 100 kHz.
The DG3535/DG3536 is built on Vishay Siliconix’s high-
density low voltage CMOS process. An eptiaxial layer is built
in to prevent latchup. The DG3535/DG3536 contains the
additional benefit of 2000 V ESD protection.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with the lead (Pb)-free device terminations. For MICRO
FOOT analog switching products manufactured with tin/
silver/copper (SnAgCu) device terminations, the lead
(Pb)-free "-E1" suffix is being used as a designator.
FEATURES
•
•
•
•
•
Low Voltage Operation
Low On-Resistance - r
ON
: 0.25
Ω
at 2.7 V
-
69 dB OIRR at 2.7 V, 100 kHz
MICRO FOOT
®
Package
ESD Protection > 2000 V
RoHS
COMPLIANT
BENEFITS
•
•
•
•
•
Reduced Power Consumption
High Accuracy
Reduce Board Space
1.6 V Logic Compatible
High Bandwidth
APPLICATIONS
•
•
•
•
•
•
Cellular Phones
Speaker Headset Switching
Audio and Video Signal Routing
PCMCIA Cards
Battery Operated Systems
Relay Replacement
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG3535/DG3536
MICRO FOOT 10-Bump
V+
A
IN
1
NO
1
NC
1
NO
2
NC
2
IN
2
B
COM
1
C
NC
1
GND
NC
2
IN
2
COM
2
NO
2
1
2
3
4
DG3535
Top View
IN
1
COM
1
V+
TRUTH TABLE
Logic
NC1 and NC2
ON
OFF
NO1 and NO2
OFF
ON
0
1
COM
2
NO
1
GND
1
2
3
4
Device Marking
A1 Locator
A
NO
2
IN
2
COM
2
NC
2
ORDERING INFORMATION
Temp Range
Package
MICRO FOOT: 10 Bump
(4 x 3, 0.5 mm Pitch,
238 µm Bump Height)
Part Number
DG3535DB-T5-E1
DG3535DB-T1-E1
DG3536DB-T5-E1
B
GND
DG3536
Top View
IN
1
COM
1
V+
XXX
3535
3535 = Example Base Part Number
xxx = Data/Lot Traceability Code
- 40 to 85 °C
C
NO
1
NC
1
Document Number: 72961
S-70853-Rev. F, 30-Apr-07
www.vishay.com
1
DG3535/DG3536
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NO
a
Continuous Current (NO, NC, COM)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
Package Solder Reflow Conditions
b
ESD per Method 3015.7
Power Dissipation (Packages)
c
MICRO FOOT: 10 Bump (4 x 3 mm)
d
(D Suffix)
IR/Convection
Limit
- 0.3 to + 6
- 0.3 to (V+ + 0.3 V)
± 300
± 500
- 65 to 150
250
>2
457
Unit
V
mA
°C
kV
mW
Notes:
a Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b Refer to IPC/JEDEC (J-STD-020B)
c All bumps welded or soldered to PC Board.
d Derate 5.7 mW/°C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
d
r
ON
Flatness
d
On-Resistance
Match Between Channels
d
V
NO
, V
NC
,
V
COM
r
ON
r
ON
Flatness
Δr
DS(on)
I
NO(off)
I
NC(off)
I
COM(off)
Channel-On Leakage Current
Digital Control
Input High Voltage
d
Input Low Voltage
Input Capacitance
Input Current
V
INH
V
INL
C
in
I
INL
or I
INH
V
IN
= 0 or V+
Full
Full
Full
Full
1
10
1
1.4
0.5
V
pF
µA
I
COM(on)
V+ = 2.7 V, V
COM
= 0.6/1.5 V
I
NO
, I
NC
= 100 mA
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
-2
- 20
-2
- 20
-2
- 20
0
0.25
V+
0.4
0.5
0.15
0.05
2
20
2
20
2
20
nA
Ω
V
Symbol
V+ = 3 V, ± 10 %,V
IN
= 0.5 V or 1.4 V
e
Temp
a
Min
b
Limits
- 40 to 85 °C
Typ
c
Max
b
Unit
Switch Off Leakage Current
V+ = 3.3 V,
V
NO
, V
NC
= 0.3 V/3 V, V
COM
= 3 V/0.3 V
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/3 V
www.vishay.com
2
Document Number: 72961
S-70853-Rev. F, 30-Apr-07
DG3535/DG3536
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
N
O
, N
C
Off Capacitance
d
Channel-On Capacitance
Power Supply
Power Supply Current
I+
V
IN
= 0 or V+
Room
Full
0.001
1.0
1.0
µA
d
Limits
- 40 to 85 °C
Temp
a
Room
Full
Min
b
Typ
c
52
43
1
6
21
- 69
- 69
145
145
406
406
pF
pC
dB
Max
b
82
90
73
78
ns
Unit
Symbol
V+ = 3 V, ± 10 %,V
IN
= 0.5 V or 1.4 V
e
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
V
IN
= 0 or V+, f = 1 MHz
C
L
= 1 nF, V
GEN
= 1.5 V, R
GEN
= 0
Ω
R
L
= 50
Ω,
C
L
= 5 pF, f = 100 kHz
V
NO
or V
NC
= 2.0 V, R
L
= 50
Ω,
C
L
= 35 pF
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
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