LS846
LOW NOISE LOW LEAKAGE
SINGLE N-CHANNEL
JFET AMPLIFIER
FEATURES
ULTRA LOW NOISE
LOW INPUT CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation TA=25°C
Maximum Currents
Gate Forward Current
Maximum Voltages
Gate to Source
Gate to Drain
V
GSO
= 60V
V
GDO
= 60V
*For equivalent Monolithic Dual, see LS843 Family
I
G(F)
= 10mA
300mW
3
S
2
e
n
= 3nV/√Hz
C
ISS
= 4pF
TO-72
TOP VIEW
-55 to +150°C
-55 to +150°C
TO-92
TOP VIEW
SOT-23
TOP VIEW
SOT-23
TOP VIEW
D
1
3
G
SYMBOL
BV
GSS
V
GS(OFF)
V
GS
I
DSS
I
G
I
G
I
GSS
G
fss
G
fs
G
OSS
G
OS
NF
e
n
e
n
C
ISS
C
RSS
CHARACTERISTIC
2
Gate to Source Breakdown Voltage
Gate to Source Pinch-off Voltage
Gate to Source Operating Voltage
Drain to Source Saturation Current
Gate Operating Current
Gate Operating Current Reduced V
DG
Gate to Source Leakage Current
Full Conductance Transconductance
Typical Operation Transconductance
Full Output Conductance
Typical Operation Output Conductance
Noise Figure
Noise Voltage
Noise Voltage
Common Source Input Capacitance
Common Source Reverse Transfer Cap.
MIN
-60
-1
-0.5
1.5
TYP
MAX
-3.5
-3.5
UNITS
V
V
V
mA
pA
pA
pA
µS
µS
CONDITIONS
V
DS
= 0, I
D
= 1nA
V
DS
= 15V, I
D
= 1nA
V
DS
= 15V, I
D
= 500µA
V
DS
= 15V, V
GS
= 0
V
DG
= 15V, I
D
= 500µA
V
DG
= 3V, I
D
= 500µA
V
GS
= 15V, V
DS
= 0
V
DS
= 15V, V
GS
= 0,
f
= 1kHz
V
DS
= 15V, I
D
= 200µA
V
DS
= 15V, V
GS
= 0
V
DS
= 15V, I
D
= 200µA
V
DS
= 15V, V
GS
= 0, R
G
= 10MΩ,
f
= 100Hz, NBW = 6Hz
V
DS
= 15V, I
D
= 500µA,
f
= 1kHz,
NBW = 1Hz
V
DS
= 15V, I
D
= 500µA,
f
= 10Hz,
NBW = 1Hz
V
DS
= 15V, I
D
= 500µA,
f
= 1MHz
5
-15
-5
15
-50
-30
-100
1500
1000
1500
40
2.0
2.70
0.5
3
7
11
8
3
µS
µS
dB
nV/√Hz
nV/√Hz
pF
pF
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201152 05/20/2014 Rev#A11 ECN# LS846
STANDARD PACKAGE DIMENSIONS:
TO-72
Four Lead
TO-92
0.89
1.03
SOT-23
1
1.78
2.05
0.37
0.51
SOT-23
3
2.80
3.04
2
1.20
1.40
2.10
2.64
0.085
0.180
0.89
1.12
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
*Dimensions in inches
NOTES:
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate negative electrical polarity only.
3. Derate 2.8mW/ºC above 25ºC.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201152 05/20/2014 Rev#A11 ECN# LS846
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