^ztni-Conducto'i ^Prodaati, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PMD 20K SERIES
150 WATT (14 AMP CONTINUOUS, 20 AMP PEAK)
ABSOLUTE
MAXIMUM RATINGS
PARAMETER
Collector Emitter Voltage
PMD 20K120
PMD20K150
PMD 20K200
SYMBOL
VCEO
MAXIMUM
120
150
200
UNITS
VrJc
FEATURES
• Electrical specifications guaranteed for
operating junction temperature range of
0 - 150°C
• Guaranteed and 100% tested for I
SB
(Secondary Breakdown Current) insur-
ing maximum performance at high
energy levels
• Built-in speed up diode for fast turn-off
with negative base drive
• Low thermal resistance for more use-
able power and lower operating
temperatures
• Hermetically sealed
Collector Base Voltage
PMD20K120
PMD 20K150
PMD 20K200
Emitter Base Voltage
Collector Current
Continuous
Peak
Base Current
Thermal Resistance
Total Internal Power
Dissipation <&• T
c
= 0°C'
Operating Junction and
Storage Temperature
VCBO
Vdc
120
150
200
2
14
20
0.5
1.0
150
-65 to +150
-65 to +200
Adc
"C/Watt
Watts
°C
Vdc
Adc
V
EBO
"c
IB
e
JC
PD
T,
TSTG
> For operation above T
c
= 0°C. derate <u 1 W/°C.
DEVICE SELECTION GUIDE
DESCRIPTION
The PMD 20K Series of devices are
three-terminal NPN Switching Darlington
Power Transistors. These devices are
monolithic epitaxial base structures with
built-in base to emitter shunt resistors.
They have been designed to switch at
frequencies up to 30kHz. The devices are
CVD glass passivated to increase
reliability and provide reduced high-
temperature reverse leakage current.
Internal diode protection (D1) of the
Darlington configuration is built into the
structure to limit the device power dissipa-
tion during negative overshoot. Diode D2
is built-in to reduce device turn-off time
when negative base drive is used.
DEVICE
PMD20K120
PMD 20K150
PMD 20K200
VOLTAGE
RATING
120V
150V
200V
Excellent thermal resistance junction to
case (6
JC
) provides for more useable
power at lower operating temperatures.
This, coupled with 100% I
SB
testing,
insures optimum performance and dura-
bility in power applications such as
switching regulators and inverters. These
Darlington devices are hermetically
sealed steel TO-3 packages providing
high reliability and low thermal resistance.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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