CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 1/7
MTN2510E3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Repetitive Avalanche Rated
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
R
DSON(TYP) @
V
GS
=10V, I
D
=30A
100V
50A
17mΩ
Symbol
MTN2510E3
Outline
TO-220
G：Gate
D：Drain
S：Source
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C
Continuous Drain Current @ T
C
=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=30A, R
G
=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
T
C
=25°C
Power Dissipation
T
C
=100°C
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle
≤
1%
MTN2510E3
V
DS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
100
±30
50
35
150
30
45
22.5
155
61
-55~+175
V
A
mJ
W
°C
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 2/7
Value
0.97
62.5
Unit
°C/W
°C/W
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
Min.
100
1.5
-
-
-
-
-
50
Typ.
-
2.4
38
-
-
-
17
-
25
6.1
9.2
19
67
75
34
1888
236
124
2
-
-
0.88
120
380
Max.
-
4.0
-
±
100
1
25
30
-
-
-
-
-
-
-
-
-
-
-
-
50
150
1.3
-
-
Unit
V
V
S
nA
μA
μA
m
Ω
A
nC
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=30A
V
GS
=
±
30
V
DS
=80V, V
GS
=0V
V
DS
=70V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=30A
V
DS
=10V, V
GS
=10V
I
D
=30A, V
DS
=50V, V
GS
=10V
V
DS
=50V, I
D
=1A, V
GS
=10V,
R
G
=6
Ω
*R
DS(ON)
*I
D(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
ns
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=15mV, V
DS
=0V, f=1MHz
I
F
=I
S
, V
GS
=0V
I
F
=25A, V
GS
=0, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
MTN2510E3-0-UB-S
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
MTN2510E3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
150
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 3/7
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
10
I
D
=250
μ
A,
V
GS
=0V
I
D
, Drain Current (A)
120
90
60
V
GS
=4V
V
GS
=5V
30
V
GS
=3V
0
0
2
4
6
8
V
DS
, Drain-Source Voltage(V)
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
0.8
0.6
Tj=150°C
V
GS
=4.5V
0.4
0.2
V
GS
=10V
10
0.1
1
10
I
D
, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
200
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
2.4
I
D
=30A
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
160
120
80
40
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2
1.6
1.2
0.8
0.4
0
-60
V
GS
=10V, I
D
=30A
R
DS(ON)
@Tj=25°C : 17mΩ
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
MTN2510E3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
Ciss
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 4/7
Threshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
1
0.8
0.6
0.4
0.2
I
D
=250
μ
A
10000
Capacitance---(pF)
1000
C
oss
100
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
-60
-20
20
60
100
140
180
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
10
Gate Charge Characteristics
V
DS
=50V
V
GS
, Gate-Source Voltage(V)
10
8
6
V
DS
=20V
1
V
DS
=5V
4
2
0.1
Ta=25°C
Pulsed
I
D
=30A
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
5
10
15
20
Qg, Total Gate Charge(nC)
25
30
Maximum Safe Operating Area
1000
Maximum Drain Current vs Case Temperature
60
I
D
, Maximum Drain Current(A)
R
DSON
Limited
100
100
μ
s
1ms
10ms
100ms
1s
DC
50
40
30
20
10
0
V
GS
=10V, R
θJC
=0.97°C/W
I
D
, Drain Current(A)
10
1
T
C
=25°C, Tj=175°C
V
GS
=10V,
θ
JC
=0.97°C/W
Single Pulse
0.1
0.01
0.1
10
100
V
DS
, Drain-Source Voltage(V)
1
1000
25
50
75
100
125
150
T
C
, Case Temperature(°C)
175
200
MTN2510E3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
140
120
I
D
, Drain Current(A)
V
DS
=5V
Spec. No. : C433E3
Issued Date : 2010.07.15
Revised Date : 2013.04.29
Page No. : 5/7
Single Pulse Maximum Power Dissipation
3000
2500
Power (W)
2000
1500
1000
T
J(MAX)
=175°C
T
C
=25°C
θ
JC
=0.97°C/W
100
80
60
40
20
0
0
2
4
6
8
10
V
GS
, Gate-Source Voltage(V)
12
500
0
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.05
0.02
0.01
1.R
θ
JC
(t)=r(t)*R
θJC
2.Duty Factor, D=t
1
/t
2
3.T
JM
-T
C
=P
DM
*R
θ
JC
(t)
4.R
θJC
=0.97°C/W
r(t), Normalized Effective Transient
Thermal Resistance
0.1
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t
1
, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTN2510E3
CYStek Product Specification
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