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S524AB0XB1

Description
32K/64K-bit Serial EEPROM for Low Power
File Size87KB,16 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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S524AB0XB1 Overview

32K/64K-bit Serial EEPROM for Low Power

S524AB0X91/B0XB1
32K/64K-bit
Serial EEPROM
for Low Power
Data Sheet
OVERVIEW
The S524AB0X91/B0XB1 serial EEPROM has a 32K/64K-bit (4,096/8,192 bytes) capacity, supporting the
standard I
2
C™-bus serial interface. It is fabricated using Samsung’ most advanced CMOS technology. It has
s
been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a
hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled
by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 32 bytes of data into
the EEPROM in a single write operation. Another significant feature of the S524AB0X91/B0XB1 is its support for
fast mode and standard mode.
FEATURES
I C-Bus Interface
Two-wire serial interface
Automatic word address increment
2
Operating Characteristics
Operating voltage
— 1.8 V to 5.5 V
Operating current
— Maximum write current: < 3 mA at 5.5 V
— Maximum read current: < 400
µA
at 5.5 V
— Maximum stand-by current: < 1
µA
at 5.5 V
Operating temperature range
— – 25°C to + 70°C (commercial)
— – 40°C to + 85°C (industrial)
Operating clock frequencies
— 100 kHz at standard mode
— 400 kHz at fast mode
Electrostatic discharge (ESD)
— 5,000 V (HBM)
— 500 V (MM)
Packages
8-pin DIP, SOP, and TSSOP
EEPROM
32K/64K-bit (4,096/8,192 bytes) storage area
32-byte page buffer
Typical 3 ms write cycle time with
auto-erase function
Hardware-based write protection for the entire
EEPROM (using the WP pin)
EEPROM programming voltage generated
on chip
1,000,000 erase/write cycles
100 years data retention
6-1

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