CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C107H8
Issued Date : 2015.12.07
Revised Date :
Page No. : 1/10
MTD13P03H8
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Pb-free lead plating and Halogen-free package
BV
DSS
I
D
@V
GS
=-10V, T
C
=25°C
I
D
@V
GS
=-10V, T
A
=25°C
R
DSON(TYP)
V
GS
=-10V, I
D
=-8A
V
GS
=-4.5V, I
D
=-5A
-30V
-30A
-8.5A
11.5mΩ
19.2mΩ
Symbol
MTD13P03H8
Outline
EDFN5×6
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTD13P03H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTD13P03H8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
10s
Spec. No. : C107H8
Issued Date : 2015.12.07
Revised Date :
Page No. : 2/10
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=-10V
(Note1)
Continuous Drain Current @ T
C
=100°C, V
GS
=-10V
(Note1)
Continuous Drain Current @ T
A
=25°C, V
GS
=-10V
(Note2)
Continuous Drain Current @ T
A
=70°C, V
GS
=-10V
(Note2)
Pulsed Drain Current
(Note3)
Avalanche Current
(Note4)
Avalanche Energy @ L=0.1mH, I
D
=-30A, V
DD
=-30V
(Note4)
T
C
=25℃
(Note1)
T
C
=100℃
(Note1)
Total Power Dissipation
T
A
=25°C
(Note2)
T
A
=70°C
(Note2)
Operating Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
P
D
P
DSM
Tj, Tstg
-14.3
-11.4
-30
±25
-30
-21
-8.5
-6.8
-120
-30
45
33
16.5
5.4
1.9
3.4
1.2
-55~+175
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient
(Note2)
Symbol
R
th,j-c
t≤10s
Steady State
R
th,j-a
Typical Maximum
3.5
4.5
18
23
50
65
Unit
°C/W
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=175
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.
Pulse width limited by junction temperature T
J(MAX)
=175
°
C.
4. Ratings are based on low frequency and low duty cycles to keep initial T
J
=25
°
C. 100% tested by conditions of
L=0.1mH, I
AS
=-22A, V
GS
=-10V, V
DD
=-25V.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
MTD13P03H8
Min.
-30
-1.5
-
-
-
-
-
-
Typ.
-
-
12.9
-
-
-
11.5
19.2
Max.
-
-2.5
-
±
100
-1
-10
14
25
Unit
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=-250μA
V
DS
= V
GS
, I
D
=-250μA
V
DS
=-15V, I
D
=-3.8A
V
GS
=
±
25V
V
DS
=-24V, V
GS
=0V
V
DS
=-24V, V
GS
=0, Tj=70°C
V
GS
=-10V, I
D
=-8A
V
GS
=-4.5V, I
D
=-5A
CYStek Product Specification
*1
CYStech Electronics Corp.
Dynamic
*4
Ciss
-
Coss
-
Crss
-
Qg
*1, 2
-
Qgs
*1, 2
-
Qgd
*1, 2
-
t
d(ON)
*1, 2
-
tr
-
*1, 2
t
d(OFF)
*1, 2
-
t
f
*1, 2
-
Rg
-
Source-Drain Diode
I
S
*1
-
I
SM
*3
-
V
SD
*1
-
trr
-
Qrr
-
1473
149
125
32.7
5.6
7.3
11.8
19.8
66.2
11.2
7
-
-
-0.79
15
6.4
-
-
-
-
-
-
-
-
-
-
-
-30
-120
-1.2
-
-
Spec. No. : C107H8
Issued Date : 2015.12.07
Revised Date :
Page No. : 3/10
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
nC
V
DS
=-15V, V
GS
=-10V, I
D
=-8A
ns
Ω
A
V
DS
=-15V, I
D
=-8A, V
GS
=-10V, R
G
=1
Ω
f=1MHz
V
ns
nC
I
S
=-3A, V
GS
=0V
I
F
=-8A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
*4.Guaranteed by design, not subject to production testing.
Recommended Soldering Footprint
unit : mm
MTD13P03H8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
80
70
-I
D
, Drain Current(A)
60
50
40
30
20
10
0
0
2
4
6
8
-V
DS
, Drain-Source Voltage(V)
10
-V
GS
=3V
4V
3.5V
10V,9V,8V,7V,6V
5V
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C107H8
Issued Date : 2015.12.07
Revised Date :
Page No. : 4/10
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
I
D
=-250μA,
V
GS
=0V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-V
SD
, Source-Drain Voltage(V)
V
GS
=0V
100
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
0.8
0.6
0.4
0.2
V
GS
=-4.5V
Tj=150°C
V
GS
=-10V
10
0.1
1
10
-I
D
, Drain Current(A)
100
0
2
4
6
8
-I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
500
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
2.4
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
450
400
350
300
250
200
150
100
50
0
0
2
I
D
=-8A
2
1.6
1.2
0.8
0.4
0
V
GS
=-10V, I
D
=-8A
R
DS(ON)
@ Tj=25°C : 11.5mΩ (typ.)
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTD13P03H8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
-V
GS(th)
, Normalized Threshold Voltage
10000
1.4
1.2
Spec. No. : C107H8
Issued Date : 2015.12.07
Revised Date :
Page No. : 5/10
Threshold Voltage vs Junction Tempearture
I
D
=-1mA
Capacitance---(pF)
Ciss
1
0.8
0.6
0.4
0.2
0
I
D
=-250μA
1000
C
oss
Crss
100
0
5
10
15
20
25
-V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0
25
50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
1000
-V
GS
, Gate-Source Voltage(V)
100
10
1
0.1
0.01
0.01
0.1
1
10
-V
DS
, Drain-Source Voltage(V)
100
T
A
=25°C, V
GS
=-10V,Tj=150°C
R
θJA
=65°C/W, Single Pulse
Gate Charge Characteristics
10
8
6
4
2
I
D
=-8A
V
DS
=-10V
-I
D
, Drain Current (A)
R
DSON
Limited
100μs
1m
10ms
100ms
1s
DC
V
DS
=-15V
V
DS
=-24V
0
0
5
10
15
20
25
30
Qg, Total Gate Charge(nC)
35
40
Maximum Drain Current vs Junction Temperature
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
9
-I
D
, Maximum Drain Current(A)
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
200
T
A
=25°C, V
GS
=-10V,
R
θJA
=65°C/W
V
DS
=-10V
10
1
V
DS
=-15V
0.1
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
1
-I
D
, Drain Current(A)
10
MTD13P03H8
CYStek Product Specification
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