Pressure sensors
C28 series
Series/Type:
Ordering code:
Date:
Version:
Gauge pressure sensor die for front side pressure applications
2009-08-03
3
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Identification/Classification 2
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Ordering code: (top right header bar)
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AS SEN PD
Gauge pressure sensor die for front side pressure applications
Pressure sensors
C28 series
EPCOS AG 2015. Reproduction, publication and dissemination of this publication, enclosures hereto and the information
contained therein without EPCOS' prior express consent is prohibited.
EPCOS AG is a TDK Group Company.
Pressure sensors
C28 series
Gauge pressure sensor die for front side pressure applications
Applications
Medical devices
Automotive
Automation
Features
Piezoresistive MEMS technology
Small dimensions: 2.05 × 2.05 mm
Square diaphragm
Measured media (front side):
Dry non-aggressive gases.
Unsuitable for substances which react with
glass, silicon or aluminum.
Whetstone bridge with mV output,
ratiometric to supply voltage
Rated pressure ranges 1.6 up to 40 bar
Options
Temperature sensing diode
Delivery mode
Tray
Dimensional drawings
150 A B
2050
560
560
Note1
390
800
B
X5
X4
660
95
B Note1
A
2050
235
640
400
X9
allowable edge disruptions
80 µm max.
allowable edge disruptions
50 µm max.
electrical diagram:
p
660
X4
X5
X1
X2
X3
X10
810
X8
700
X5
R1 R2
X4
R3 R4
X3 X2
X9
X8
X1
280
560
840
280
560
850
Si 100
glass
BOROFLOAT
TM
all dimensions in µm
Note1: geometry of diaphragm depend
on specification
checked bond area (typ. 100µm x 100µm)
X1 :
X2 :
X3 :
X4 :
X5 :
X8 :
X9 :
X10:
Vout+
VDD–
VDD–
Vout–
VDD+
Diode (N)
Diode (P)
Substrate
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 2 of 8
2009-08-03
Pressure sensors
C28 series
Gauge pressure sensor die for front side pressure applications
Technical data
Absolute maximum ratings
Parameter
Supply voltage
Maximum supply voltage
Temperature ranges
2)
Symbol
Conditions
Min.
Typ.
Max.
Unit
V
DD
Without damage
1)
10
V
Operating temperature range
Storage temperature range
Pressure ranges
Operating pressure ranges
Over pressure
Burst pressure
T
a
T
st
–40
–40
–40
135
140
150
°
C
°
C
°
C
For t <15 min
3)
p
r
p
ov
p
berst
Gauge pressure
Gauge pressure
Gauge pressure
4)
5)
6)
0 ... 1.6
2.5
3
0 ... 40
bar
p
r
p
r
Electrical specifications
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Supply voltage / bridge resistance
Operating supply voltage
Total bridge resistance
Temperature coefficient
of total bridge resistance
Output signal @ V
DD
= 5 V
Offset
Sensitivity
Temperature coefficient
of the sensitivity
Pressure hysteresis
V
0
S
α
S
β
S
pHys
16)
V
DD
R
S
α
Rs
β
Rs
7)
1.0
8)
5.0
3.2
2.4
6
3.7
2.7
8
V
kΩ
10 /K
10 /K
–6
2
–3
@ 25 °
C
@ 25 °
C
2.7
2.1
4
9)
@ 25 °
C
@ 25 °
C
@ 25 °
C
10)
13)
–30
0
30
mV
mV/bar
10 /K
10 /K
% FS
–6
2
–3
See next table
–2.5
3
–0.1
–2.2
5
–1.9
8
0.1
15)
Optional temperature sensing diode
Forward diode voltage
Temperature coefficient
of forward diode voltage
V
F
TCV
F
@ 25 ° I
F
= 50 µA
C,
@ 25 ° I
F
= 50 µA
C,
17)
550
–2.4
600
–2.2
650
–2.0
mV
mV/K
18)
Long-term stability (Full scale normal output FSON = 120 mV)
Temperature hysteresis of offset
Temperature cycle drift of offset
High temperature drift of offset
Long term stability of offset
THV
0
TCDV
0
HTDV
0
LTSV
0
19)
19)
19)
19)
–0.35
–0.25
–0.25
–0.45
±0.2
±0.1
±0.1
±0.3
0.35
0.25
0.25
0.45
% FSON
% FSON
% FSON
% FSON
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 3 of 8
2009-08-03
Pressure sensors
C28 series
Gauge pressure sensor die for front side pressure applications
Operating pressures and ordering codes
Parameter @ 25 ° V
DD
= 5 V
C,
Operating pressure
4)
Symbol
p
r
TCV
0
TCV
0
L
S
–
+
Typ.
2.5
–8/±4/8
–4/±2/4
±0.2/±0.3
36/48/60
yes
AER –2.500 C28/1 G08 D
Typ.
6.0
–8/±4/8
–4/±2/4
±0.2/±0.3
15/20/25
yes
AER –6.000 C28/1 G08 D
Typ.
10
–8/±4/8
–4/±2/4
±0.2/±0.3
9/12/15
yes
AER –10.00 C28/1 G08 D
Typ.
25
–8/±4/8
–4/±2/4
±0.2/±0.3
3.6/4.8/6
yes
AER –25.00 C28/1 G08 D
Units
bar
µV/VK
µV/VK
% FS
mV/bar
Temperature coefficient
11)
of offset voltage (unglued)
[min/typ/max]
Nonlinearity
14)
[typ/max]
Sensitivity
[min/typ/max]
Temperature sensing diode present
13)
Product type
B58601D8010A026
B58601D8010A024
B58601D8010A025
Ordering code
Other operating pressures upon request.
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 4 of 8
B58601D8010A027
2009-08-03
Pressure sensors
C28 series
Gauge pressure sensor die for front side pressure applications
Symbols and Terms
1)
2)
3)
4)
5)
6)
7)
Maximum power supply V
DD
This is the maximal allowed voltage, which may be applied to the piezoresistive bridge circuit without damage.
Operating temperature range T
a
This is the operating Temperature range T
a,min
to T
a,max
. Because most of the sensor parameters depend on assembling
conditions like gluing, wire bonding etc, the die has to be tested over the operating temperature range by the customer
fully assembled. For design verification and process control samples, mounted on a TO39 base are tested over a
reduced measuring temperature range of T
meas,min
to T
meas,max
.
Storage temperature range T
st
If the pressure sensor dies are stored in the temperature range T
st,min
to T
st,max
without applied voltage power supply, this
will not affect the performance of the pressure sensor dies.
Operating pressure range p
r
In the operating pressure range 0 to p
r,max
the pressure sensor die output characteristic is as defined in this specification.
Over pressure p
OV
Pressure cycles in the pressure range 0 to p
ov
do not affect the performance of the pressure sensor dies.
Burst pressure p
berst
Up to the burst pressure p
berst
the diaphragm of the sensor die will not be destroyed mechanically. This parameter is
tested at room temperature on samples mounted on an aluminium socket by increasing the applied pressure until the
diaphragm is destroyed.
Operating power supply V
DD
The pressure sensor parameters are defined for a power supply voltage of V
DD
= 5 V. In the operating power supply
voltage range V
DD,min
to V
DD,max
the ratiometric parameters r(V
DD
) like sensitivity, offset voltage and the temperature
coefficient of the offset voltage are defined by:
r
(
V
DD
)
=
r(5[ V ])
8)
V
DD
5[ V ]
Total bridge resistance R
S
The total bridge resistance is defined between pad X5 and X2, X3 (see the dimensional drawing in this data sheet) of the
closed piezoresistive bridge circuit. The total bridge resistance is in a good approximation the output impedance of the
piezoresistive bridge circuit. This parameter is tested completely on a wafer (wafer level test measurement).
Temperature coefficients of resistance
α
Rs
and
β
Rs
:
The temperature coefficients of resistance are tested for design verification on samples, mounted on a TO39 base
over a reduced temperature range T
meas
,
min
= –20 ° to T
meas
,
max
= 80 ° with T
R
= 25 °
C
C
C.
The temperature coefficients of first and second order are defined with the polynomial:
9)
R
S
(T)
=
R
S
(T
=
25
°
C )
1
+α
Rs
T
−
25
°
C
+β
Rs
T
−
25
°
C
(
)
(
)
2
10)
11)
The coefficients
α
Rs
and
β
Rs
are calculated using the three measurement points of R
s
(T) at T
meas,min
, T
R
and T
meas,max
.
Offset voltage V
0
The offset voltage V
0
is the output voltage V
out
(p = 0 bar gauge) at zero gauge pressure and for a bridge voltage power
supply V
DD
= 5 V. This parameter is tested completely on a wafer (wafer level test measurement).
It should be noted that this parameter may be influenced by assembly.
Temperature coefficient of offset voltage TCV
0
The temperature coefficients of offset voltage are defined for a bridge voltage power supply V
DD
= 5 V.
These parameters strongly depend on assembly conditions like gluing, wire bonding etc.
The temperature coefficients of offset voltage are tested for design verification on samples, mounted on a TO39 base
over a temperature range T
min
= –40 ° to T
max
= 135 °
C
C.
Therefore TCV
0+
and TCV
0-
are defined for the measurement temperature range by:
TCVo
+
=
V
o
(T
max
)
−
V
o
(25
°
C)
T
max
−
25
°
C
TCVo
−
=
V
o
(T
min
)
−
V
o
(25
°
C)
T
min
−
25
°
C
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 5 of 8
2009-08-03
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