AP05N50I
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
500V
1.4Ω
5.0A
S
Description
AP05N50 provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
500
+20
5.0
2.8
18
31.3
0.25
2
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
4.5
3
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
4.0
65
Unit
℃/W
℃/W
1
201009233
Data & specifications subject to change without notice
AP05N50I
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
3
3
o
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=2.7A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=2.7A
V
DS
=500V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=3.1A
V
DS
=400V
V
GS
=10V
V
DD
=250V
I
D
=3.1A
R
G
=12Ω,V
GS
=10V
R
D
=80.6Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
500
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
2.4
-
-
-
19
4.6
6.3
11
8
32
10
985
85
3.3
2.5
Max. Units
-
1.4
4
-
25
250
+100
30
-
-
-
-
-
-
1580
-
-
3.8
V
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=400V
,
V
GS
=0V
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting T
j
=25 C , V
DD
=50V , L=1mH , R
G
=25Ω , I
AS
=3A.
Parameter
Forward On Voltage
3
3
Test Conditions
T
j
=25℃, I
S
=4.5A, V
GS
=0V
I
S
=3.1A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
300
2.6
Max. Units
1.5
-
-
V
ns
uC
Reverse Recovery Time
Reverse Recovery Charge
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP05N50I
5
5
T
C
=25 C
4
o
I
D
, Drain Current (A)
3
I
D
, Drain Current (A)
10V
7.0V
6.0V
T
C
=150
o
C
4
10V
7 .0V
6 .0V
5 .0 V
3
5.0V
2
2
V
G
= 4.0V
1
1
V
G
=4.0V
0
0
2
4
6
8
0
0
4
8
12
16
20
24
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=2.7A
V
G
=10V
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
2
1
1
0.9
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
T
j
= 150
o
C
T
j
= 25
o
C
Normalized V
GS(th)
(V)
1
I
S
(A)
1
0.5
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP05N50I
f=1.0MHz
16
10000
I
D
=3.1A
V
GS
, Gate to Source Voltage (V)
V
DS
=260V
V
DS
=320V
V
DS
=400V
C (pF)
100
12
C
iss
8
C
oss
4
C
rss
0
0
10
20
30
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Operation in this
area limited by
R
DS(ON)
100us
1ms
10ms
100ms
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
I
D
(A)
0.1
1
0.1
0.05
P
DM
t
T
0.02
0.1
1s
T
c
=25 C
Single Pulse
o
DC
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
1
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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