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S3M

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size234KB,2 Pages
ManufacturerDCCOM [ DC COMPONENTS ]
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S3M Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB

S3M Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionSMCJ, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current100 A
DC COMPONENTS CO., LTD.
R
S3A
THRU
S3M
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SILICON RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts
CURRENT - 3.0 Amperes
FEATURES
* ldeal for surface mounted applications
* Low leakage current
* Glass passivated junction
SMC ( DO-214AB )
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
*Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
* Polarity: As marked
* Mounting position: Any
* Weight: 0.24 gram
.128(3.25)
.108(2.75)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current T
A
= 75 C
Peak Forward Surge Current I
FM
(surge): 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 3)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
@T
A
= 25
o
C
o
@T
A
= 125 C
o
S3A
50
35
50
S3B
100
70
100
S3D
200
140
200
S3G
400
280
400
3.0
100
1.2
5.0
250
2.5
10
60
-65 to + 175
S3J
600
420
600
S3K
800
560
800
S3M
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
uAmps
uSec
0
C/ W
pF
0
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
trr
RθJL
C
J
T
J
, T
STG
C
NOTES : 1. Measured at 1 MHz and applied reverse voltage of 4.0VDC
2. Thermal Resistance (Junction to Ambient), 0.4x0.4in
2
(10X10mm
2
) copper pads to each terminal.
3. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
346

S3M Related Products

S3M S3K S3J S3G S3B S3A S3D
Description 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB
state ACTIVE - ACTIVE DISCONTINUED ACTIVE ACTIVE -
Diode type rectifier diode - RECTIFIER DIODE rectifier diode RECTIFIER DIODE rectifier diode -

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Index Files: 451  2841  2079  425  26  10  58  42  9  1 
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