BUS98A datasheet, PDF - EEWORLD Datasheet

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BUS98A: Description30 AMPERES NPN SILICON POWER TRANSISTORS(SWITCHMODE SERIES); CategoryDiscrete semiconductor The transistor; File Size174KB，8 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BUS98A Overview

30 AMPERES NPN SILICON POWER TRANSISTORS(SWITCHMODE SERIES)

BUS98A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow
Shell connection	COLLECTOR
Maximum collector current (IC)	30 A
Collector-based maximum capacity	700 pF
Collector-emitter maximum voltage	450 V
Configuration	SINGLE
Minimum DC current gain (hFE)	8
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	250 W
Maximum power dissipation(Abs)	250 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	2700 ns
Maximum opening time (tons)	900 ns
VCEsat-Max	5 V

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Fast Turn–Off Times

60 ns Inductive Fall Time – 25

_

C (Typ)

120 ns Inductive Crossover Time – 25

_

C (Typ)

Operating Temperature Range –65 to + 200

_

C

100

_

C Performance Specified for:

Reverse–Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents (125

_

C)

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

©

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

The BUS98 and BUS98A transistors are designed for high–voltage, high–speed,

power switching in inductive circuits where fall time is critical. They are particularly

suited for line–operated switchmode applications such as:

•

•

•

•

•

Designer’s Data for “Worst Case” Conditions

— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

SWITCHMODE Series

NPN Silicon Power Transistors

Designer's

SEMICONDUCTOR TECHNICAL DATA

MOTOROLA

THERMAL CHARACTERISTICS

MAXIMUM RATINGS

REV 7

Maximum Lead Temperature

for Soldering Purposes:

1/8″ from Case for 5 Seconds

Thermal Resistance,

Junction to Case

Operating and Storage Junction

Temperature Range

Total Power Dissipation — TC = 25

_

C

— TC = 100

_

C

Derate above 25

_

C

Base Current — Continuous

— Peak (1)

Collector Current — Continuous

— Peak (1)

— Overload

Emitter Base Voltage

Collector–Emitter Voltage

Collector–Emitter Voltage

Switching Regulators

Inverters

Solenoid and Relay Drivers

Motor Controls

Deflection Circuits

™

Data Sheet

Characteristic

Rating

x

10%.

VCEO(sus)

Symbol

Symbol

TJ, Tstg

VCEV

R

θJC

VEB

IC

ICM

IoI

IB

IBM

PD

TL

BUS98

850

400

– 65 to + 200

Max

250

142

1.42

30

60

120

275

0.7

10

30

7

30 AMPERES

NPN SILICON

POWER TRANSISTORS

400 AND 450 VOLTS

(BVCEO)

250 WATTS

850 – 1000 V (BVCES)

BUS98A

BUS98

BUS98A

1000

450

Order this document

by BUS98/D

CASE 1–07

TO–204AA

Watts

W/

_

C

_

C/W

Unit

Unit

Adc

Adc

Vdc

Vdc

Vdc

_

C

_

C

1

BUS98A Related Products

	BUS98A	BUS98
Description	30 AMPERES NPN SILICON POWER TRANSISTORS(SWITCHMODE SERIES)	30 AMPERES NPN SILICON POWER TRANSISTORS(SWITCHMODE SERIES)
Maker	Motorola ( NXP )	Motorola ( NXP )
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow	unknow
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	30 A	30 A
Collector-based maximum capacity	700 pF	700 pF
Collector-emitter maximum voltage	450 V	400 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	8	8
JEDEC-95 code	TO-204AA	TO-204AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	200 °C	200 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Maximum power consumption environment	250 W	250 W
Maximum power dissipation(Abs)	250 W	250 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	2700 ns	2700 ns
Maximum opening time (tons)	900 ns	900 ns
VCEsat-Max	5 V	3.5 V

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