BUT11/11A
BUT11/11A
High Voltage Power Switching Applications
1
TO-220
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BUT11
: BUT11A
V
CEO
Collector-Emitter Voltage
: BUT11
: BUT11A
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
1.Base
Value
850
1000
Units
V
V
400
450
9
5
10
2
4
100
150
- 65 ~ 150
V
A
A
A
A
W
°C
°C
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BUT11
: BUT11A
Collector Cut-off Current
: BUT11
: BUT11A
I
EBO
V
CE
(sat)
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
: BUT11
: BUT11A
Base-Emitter Saturation Voltage
: BUT11
: BUT11A
Turn On Time
Storage Time
Fall Time
V
CE
= 850V, V
BE
= 0
V
BE
= 9V, I
C
= 0
I
C
= 3A, I
B
= 0.6A
I
C
= 2.5A, I
B
= 0.5A
I
C
= 3A, I
B
= 0.6A
I
C
= 2.5A, I
B
= 0.5A
V
CC
= 250V, I
C
= 2.5A
I
B1
= -I
B2
= 0.5A
R
L
= 100Ω
1
1
10
1.5
1.5
1.3
1.3
1
4
0.8
mA
mA
mA
V
V
V
V
µs
µs
µs
Test Condition
I
C
= 100mA, I
B
= 0
Min.
400
450
Typ.
Max.
Units
V
V
I
CES
V
BE
(sat)
t
ON
t
STG
t
F
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
Thermal Characteristics
T
C
=25°C unless otherwise noted
Symbol
R
θjC
Parameter
Thermal Resistance, Junction to Case
Typ
Max
1.25
Units
°C/W
Rev. B1, August 2001
©2001 Fairchild Semiconductor Corporation
BUT11/11A
Typical Characteristics
1000
10
100
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= 5V
I
C
= 5 I
B
h
FE
, DC CURRENT GAIN
1
10
0.1
V
CE
(sat)
1
0.01
0.1
1
10
0.01
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
10
10
I
C
= 5 I
B
V
BE
(sat)[V], SATURATION VOLTAGE
1
V
BE
(sat)
I
C
[A], COLLECTOR CURRENT
8
6
4
0.1
2
0.01
0.01
0.1
1
10
0
0
200
400
600
BUT11
800
BUT11A
1000
1200
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Reverse Biased Safe OPerating Area
10
120
Ic MAX (Continuous)
100
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
C
D
1
80
60
0.1
40
BUT11A
BUT11
0.01
1
10
100
1000
20
0
0
25
50
O
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Figure 6. Power Derating
Rev. B1, August 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST
®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
京公网安备 11010802033920号
EEWORLD
