BUT12/12A
BUT12/12A
High Voltage Power Switching Applications
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BUT12
: BUT12A
V
CEO
Collector-Emitter Voltage
: BUT12
: BUT12A
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
850
1000
400
450
8
20
4
100
150
- 65 ~ 175
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CES
I
EBO
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 100mA, L = 25mH
V
CE
= V
CES
, V
BE
= 0
V
BE
= 9V, I
C
= 0
I
C
= 6A, I
B
= 1.2A
I
C
= 6A, I
B
= 1.2A
V
CC
= 250V, I
C
= 6A
I
B1
= - I
B2
= 1.2A
R
L
= 41.6Ω
Min.
400
Typ.
Max.
1
10
1.5
1.5
1
4
0.8
Units
V
mA
mA
V
V
µs
µs
µs
* Pulsed Test: PW = 300µs, duty cycle = 1.5%
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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©2001 Fairchild Semiconductor Corporation
Rev. H3
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