DISCRETE SEMICONDUCTORS
DATA SHEET
BUT18F; BUT18AF
Silicon diffused power transistors
Product specification
Supersedes data of 1997 Aug 13
1999 Jun 11
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 package with
electrically isolated mounting base.
APPLICATIONS
•
Converters
•
Inverters
•
Switching regulators
•
Motor control systems.
andbook, halfpage
BUT18F; BUT18AF
PINNING
PIN
1
2
3
mb
base
collector
emitter
mounting base; electrically isolated from all pins
DESCRIPTION
2
1
3
MBB008
1 2 3
MBK109
Fig.1 Simplified outline (SOT186) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CESM
BUT18F
BUT18AF
V
CEO
collector-emitter voltage
BUT18F
BUT18AF
V
CEsat
I
Csat
I
C
I
CM
P
tot
t
f
collector-emitter saturation voltage
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
see Fig.4
see Fig.4
T
h
≤
25
°C;
see Fig.2
resistive load; see Figs 10 and 11
see Fig.7
open base
400
450
1.5
4
6
12
33
0.8
V
V
V
A
A
A
W
µs
PARAMETER
collector-emitter peak voltage
V
BE
= 0
850
1000
V
V
CONDITIONS
MAX.
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-h
PARAMETER
CONDITIONS
note 2
Notes
1. Mounted
without
heatsink compound and 30
±5
N force on centre of package.
2. Mounted
with
heatsink compound and 30
±5
N force on centre of package.
1999 Jun 11
2
VALUE
6.15
3.65
UNIT
K/W
K/W
thermal resistance from junction to external heatsink note 1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CESM
BUT18F
BUT18AF
V
CEO
collector-emitter voltage
BUT18F
BUT18AF
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Notes
1.
Without
heatsink compound.
2.
With
heatsink compound.
ISOLATION CHARACTERISTICS
SYMBOL
V
isolM
C
isol
PARAMETER
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
T
h
≤
25
°C;
see Fig.2; note 1
T
h
≤
25
°C;
see Fig.2; note 2
see Fig.4
see Fig.4
open base
PARAMETER
collector-emitter peak voltage
V
BE
= 0
CONDITIONS
BUT18F; BUT18AF
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
MAX.
850
1000
400
450
4
6
12
3
6
20
33
+150
150
V
V
V
V
A
A
A
A
A
W
W
UNIT
°C
°C
TYP.
−
12
−
MAX.
1500
V
UNIT
pF
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
CEOsust
BUT18F
BUT18AF
V
CEsat
V
BEsat
I
CES
collector-emitter saturation voltage
base-emitter saturation voltage
collector-emitter cut-off current
PARAMETER
collector-emitter sustaining voltage
CONDITIONS
I
C
= 100 mA; I
Boff
= 0;
L = 25 mH; see Figs 3 and 6
MIN.
400
450
I
C
= 4 A; I
B
= 800 mA; see Fig.7
−
I
C
= 4 A; I
B
= 800 mA; see Fig.8
−
V
CE
= V
CESMmax
; V
BE
= 0;
note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°C;
note 1
I
EBO
emitter-base cut-off current
V
EB
= 9 V; I
C
= 0
−
−
−
TYP.
−
−
−
−
−
−
−
MAX.
−
−
1.5
1.3
1
2
10
UNIT
V
V
V
V
mA
mA
mA
1999 Jun 11
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
SYMBOL
h
FE
PARAMETER
DC current gain
CONDITIONS
V
CE
= 5 V; I
C
= 10 mA;
see Fig.9
V
CE
= 5 V; I
C
= 1 A; see Fig.9
MIN.
10
10
−
−
−
TYP.
18
20
−
−
−
MAX.
35
35
UNIT
Switching times resistive load
(see Figs 10 and 11)
t
on
t
s
t
f
turn-on time
storage time
fall time
I
Con
= 4 A;
I
Bon
=
−I
Boff
= 800 mA
I
Con
= 4 A;
I
Bon
=
−I
Boff
= 800 mA
I
Con
= 4 A;
I
Bon
=
−I
Boff
= 800 mA
I
Con
= 4 A; I
Bon
= 800 mA
I
Con
= 4 A; I
Bon
= 800 mA
1
4
0.8
µs
µs
µs
Switching times inductive load
(see Figs 10 and 13)
t
s
t
f
Note
1. Measured with a half-sinewave voltage (curve tracer).
storage time
fall time
−
−
1.6
150
2.5
400
µs
ns
MGK674
120
handbook, halfpage
Ptot max
(%)
80
handbook, halfpage
+
50 V
100 to 200
Ω
L
horizontal
oscilloscope
40
6V
30 to 60 Hz
300
Ω
vertical
1
Ω
MGE252
0
0
50
100
Th (
o
C)
150
Fig.3
Fig.2 Power derating curve.
Test circuit for collector-emitter
sustaining voltage.
1999 Jun 11
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
handbook, full pagewidth
10
2
IC
(A)
ICM max
10
IC max
MGB922
II
1
10
−1
I
10
−2
DC
10
−3
BUT18F
BUT18AF
10
−4
1
10
10
2
10
3
VCE (V)
10
4
Mounted
without
heatsink compound and 30
±5
N force on centre of package.
T
mb
< 25
°C
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.4 Forward bias SOAR.
1999 Jun 11
5
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