P4KE18A datasheet, PDF - EEWORLD Datasheet

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P4KE18A: Description400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size140KB，4 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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P4KE18A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41

P4KE18A Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Maximum breakdown voltage	18.9 V
Minimum breakdown voltage	17.1 V
Processing package description	PLASTIC PACKAGE-2
state	DISCONTINUED
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	tin lead
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
Craftsmanship	ZENER
structure	single
Shell connection	isolation
Diode component materials	silicon
Maximum power consumption limit	1 W
polarity	unidirectional
Diode type	TRANS voltage SUPPRESSOR diode
shutdown voltage	15.3 V
Maximum non-repetitive peak speed power	400 W

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^zmi-Con

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, O

ne.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

TRANSZORB® Transient Voltage Suppressors

P4KE6.8A thru P4KE540A

FEATURES

DO-204AL (DO-41)

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 400 W peak pulse power capability with a

10/1000 us waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

PRIMARY CHARACTERISTICS

• Very fast response time

• Low incremental surge resistance

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

5.8 V to 459 V

6.8 V to 540 V

6.8 V to 440 V

400 W

1.5W

40 A

175°C

Uni-directional, bi-directional

DO-204AL (DO-41)

VBR uni-directional

VBR bi-directional

PPPM

IFSM (uni-directional only)

Tj max.

Polarity

Package

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use CA suffix (e.g. P4KE440CA).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS (T

= 25 °C unless otherwise noted)

PARAMETER

Peak pulse power dissipation with a 10/1000 us waveform

(1)

(fig.1)

Peak pulse current with a 10/1000 us waveform (

Power dissipation on infinite heatsink at T

= 75 °C (fig. 5)

Peak forward surge current 8.3 ms single half-sine wave uni-directional only <

Maximum instantaneous forward voltage at 25 A for uni-directional only <

)

Operating junction and storage temperature range

SYMBOL

PPPM

IPPM

'FSM

TJ. TSTG

LIMIT

400

UNIT

See next table

1.5

°C

3.5/5.0

-5510 + 175

Notes

(

> Non-repetitive current pulse, per fig. 3 and derated above T

= 25 °C per fig. 2

P) 8.3 ms single half-sine wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

> V

= 3.5 V for P4KE220A and below; V

= 5.0 V for P4KE250A and above

Quality Semi-Conductors

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