TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Toshiba Semiconductor |
| Parts packaging code | SC-70 |
| package instruction | USM, 2-2E1A, SC-70, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | BUILT IN BIAS RESISTANCE RATIO IS 21.36 |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 80 |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.1 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 200 MHz |
| RN2305 | RN2306 | |
|---|---|---|
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| Is it Rohs certified? | conform to | conform to |
| Maker | Toshiba Semiconductor | Toshiba Semiconductor |
| Parts packaging code | SC-70 | SC-70 |
| package instruction | USM, 2-2E1A, SC-70, 3 PIN | USM, 2-2E1A, SC-70, 3 PIN |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknow | unknow |
| ECCN code | EAR99 | EAR99 |
| Other features | BUILT IN BIAS RESISTANCE RATIO IS 21.36 | BUILT IN BIAS RESISTANCE RATIO IS 10 |
| Maximum collector current (IC) | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 50 V | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 80 | 80 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | PNP | PNP |
| Maximum power dissipation(Abs) | 0.1 W | 0.1 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Nominal transition frequency (fT) | 200 MHz | 200 MHz |
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