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BUV11

Description
SITCHMODE Series NPN Silicon Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size73KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BUV11 Overview

SITCHMODE Series NPN Silicon Power Transistor

BUV11 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-3
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)20 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
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High DC current gain; hFE min. = 20 at IC = 6 A
Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A
Very fast switching times:
TF max. = 0.8
µs
at IC = 12 A
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25
_
C
Base–Current continuous
Collector–Current— Continuous
— Peak (pw
10 ms)
Collector–Emitter Voltage (RBE = 100
Ω)
Collector–Emitter Voltage (VBE = –1.5 V)
Emitter–Base Voltage
Collector–Base Voltage
Collector–Emitter Voltage
Characteristic
Rating
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
SWITCHMODE is a trademark of Motorola, Inc.
. . . designed for high current, high speed, high power applications.
SWITCHMODE Series
NPN Silicon Power Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
REV 7
v
1.0
0.2
DERATING FACTOR
0.4
0.6
0.8
0
40
Figure 1. Power Derating
80
120
TC, TEMPERATURE (°C)
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VCBO
VCER
VEBO
VCEX
IC
ICM
θ
JC
PD
IB
160
200
– 65 to 200
Value
1.17
Max
150
240
250
250
200
20
25
4
7
20 AMPERES
NPN SILICON
POWER
METAL TRANSISTOR
200 VOLTS
150 WATTS
BUV11
Order this document
by BUV11/D
CASE 1–07
TO–204AA
(TO–3)
Watts
_
C/W
Unit
Unit
Adc
Adc
Apk
Vdc
Vdc
Vdc
Vdc
Vdc
_
C
1
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