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BUV46A

Description
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size35KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BUV46A Overview

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

BUV46A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSFM
package instructionPLASTIC, TO-220, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
Shell connectionISOLATED
Maximum collector current (IC)5 A
Collector-emitter maximum voltage450 V
ConfigurationSINGLE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment70 W
Maximum power dissipation(Abs)85 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)3800 ns
Maximum opening time (tons)1000 ns
VCEsat-Max5 V
Base Number Matches1
®
BUV46
BUV46A
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
NPN TRANSISTORS
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
FAST SWITCHING SPEED
3
1
2
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
SWITCH MODE POWER SUPPLIES
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The devices are silicon Multiepitaxial Mesa NPN
transistors in the Jedec TO-220 plastic package
intended for high voltage, fast switching
applications.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEX
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
Parameter
BUV46
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (V
BE
= -2.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Dissipation at Tc = 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
BUV46A
1000
1000
450
7
5
3
70
-65 to 150
150
850
850
400
Unit
V
V
V
V
A
A
W
o
o
C
C
January 1999
1/4

BUV46A Related Products

BUV46A BUV46
Description HIGH VOLTAGE NPN SILICON POWER TRANSISTORS HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
Is it Rohs certified? conform to conform to
Maker STMicroelectronics STMicroelectronics
Parts packaging code SFM TO-220AB
package instruction PLASTIC, TO-220, 3 PIN PLASTIC, TO-220, 3 PIN
Contacts 3 3
Reach Compliance Code not_compliant _compli
Maximum collector current (IC) 5 A 5 A
Collector-emitter maximum voltage 450 V 400 V
Configuration SINGLE SINGLE
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power consumption environment 70 W 70 W
Maximum power dissipation(Abs) 85 W 85 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 3800 ns 3800 ns
Maximum opening time (tons) 1000 ns 1000 ns
VCEsat-Max 5 V 5 V
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