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S2M

Description
1.5 A, 1000 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size14KB,1 Pages
ManufacturerSSE
Websitehttp://www.sse-diode.com/
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S2M Overview

1.5 A, 1000 V, SILICON, RECTIFIER DIODE

S2M Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1.5 A
Maximum non-repetitive peak forward current50 A
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
S2A THRU S2M
SURFACE MOUNT GLASS
PASSIVATED RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 2.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• High temperature soldering guaranteed:
260
o
C/10sec/at terminal
TECHNICAL
SPECIFICATION
SMB/DO-214AA
B
A
C
D
F
G
A
B
MAX. .155(3.94) .180(4.57)
MIN. .130(3.30) .160(4.06)
E
F
MAX. .220(5.59) .096(2.44)
MIN. .205(5.21) .084(2.13)
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
H
C
D
.083(2.11) .012(0.305)
.077(1.96) .006(0.152)
G
H
.008(0.203) .060(1.52)
.004(0.102) .030(0.76)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
L
=110
o
C)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
T
a
=25
o
C
(at rated DC blocking voltage)
o
T
a
=125 C
SYMBOL
S2A S2B S2D S2G S2J S2K S2M
UNITS
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
50
35
50
100
70
100
200
140
200
400
280
400
2.0
60
1.1
5.0
200
o
600
420
600
800 1000
560 700
800 1000
V
V
V
A
A
V
µA
µA
pF
C/W
o
C
30
C
J
Typical Junction Capacitance
(Note 1)
16
Typical Thermal Resistance
(Note 2) R
θ
(ja)
-65 to +150
T
STG
,T
J
Storage and Operation Junction Temperature
Note:
1.Measured at 1.0 MHz and applied voltage of 4.0V
dc
2.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
http://www.sse-diode.com

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