®
BUX48/48A
BUV48A/V48AFI
HIGH POWER NPN SILICON TRANSISTORS
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
1
2
2
1
3
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
TO-3
TO-218
3
2
DESCRIPTION
The BUX48/A, BUV48A and BUV48AFI are
silicon Multiepitaxial Mesa NPN transistors
mounted respectively in TO-3 metal case, TO-218
plastic package and ISOWATT218 fully isolated
package. They are particulary intended for
switching and industrial applications from single
and tree-phase mains.
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
For TO-3 Package
Others Packages
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
BUX48
Value
BUX48A
BUV48A
BUV48AFI
1000
1000
450
7
15
30
55
4
20
TO-218
ISOWATT218
125
55
-65 to 150
-65 to 150
150
150
V
V
V
V
A
A
A
A
A
W
C
o
C
o
Unit
V
CER
V
CES
V
CEO
V
EBO
I
C
I
CM
I
CP
I
B
I
BM
P
tot
T
stg
T
j
Collector-Emitter Voltage (R
BE
= 10Ω)
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Collector Peak Current non repetitive (t
p
<20µs)
Base Current
Base Peak Current
Total Dissipation at T
c
= 25 C
Storage Temperature
Max. Operating Junction Temperature
o
850
850
400
TO-3
175
-65 to200
200
January 2000
1/7
BUX48 / BUX48A / BUV48A / BUV48AFI
THERMAL DATA
TO-3
R
thj-case
Thermal Resistance Junction-case
Max
1
TO-218
1
ISOWATT218
2.2
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
CER
I
EBO
Parameter
Collector Cut-off Current
(V
BE
= 0)
Collector Cut-off Current
(R
BE
= 10
Ω)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= rated V
CES
V
CE
= rated V
CES
,
V
CE
= rated V
CER
V
CE
= rated V
CER
,
V
EB
= 5 V
T
c
= 125
o
C
T
c
= 125
o
C
Min.
Typ.
Max.
200
2
500
4
1
Unit
µA
mA
µA
mA
mA
L= 25mH
V
CEO(SUS)
∗
Collector-Emitter Sustaining I
C
= 200 mA
Voltage (I
B
= 0)
for
BUX48
for
BUX48A/V48A/V48AFI
V
EBO
V
CE(sat)
∗
Emitter-Base Voltage
(I
C
= 0)
Collector-Emitter Saturation
Voltage
I
E
= 50 mA
for
BUX48
I
C
= 10 A
I
B
= 2 A
I
C
= 15 A
I
B
= 4 A
I
C
= 15 A
I
B
= 3 A
for
BUX48A/V48A/V48AFI
I
C
= 8 A
I
B
= 1.6 A
I
C
= 12 A
I
B
= 2.4 A
for
BUX48
I
C
= 10 A
I
B
= 2 A
for
BUX48A/V48A/V48AFI
I
C
= 8 A
I
B
= 1.6 A
400
450
7
30
V
V
V
1.5
3.5
5
1.5
5
1.6
1.6
V
V
V
V
V
V
V
V
BE(sat)
∗
Base-Emitter Saturation
Voltage
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
RESISTIVE SWITCHING TIMES
Symbol
t
on
Parameter
Turn-on Time
Test Conditions
for
BUX48
V
CC
= 150 V
I
C
= 10 A
I
B1
= 2 A
for
BUX48A/V48A/V48AFI
V
CC
= 150 V
I
C
= 8 A
I
B1
= 1.6 A
for
BUX48
V
CC
= 150 V
I
C
= 10 A
I
B1
= - I
B2
= 2 A
for
BUX48A/V48A/V48AFI
V
CC
= 150 V
I
C
= 8 A
I
B1
= - I
B2
= 1.6 A
for
BUX48
V
CC
= 150 V
I
C
= 10 A
I
B1
= - I
B2
= 2 A
for
BUX48A/V48A/V48AFI
V
CC
= 150 V
I
C
= 8 A
I
B1
= - I
B2
= 1.6 A
Min.
Typ.
Max.
Unit
1
µs
µs
1
t
s
Storage Time
3
µs
µs
3
t
f
Fall Time
0.8
µs
µs
0.8
2/7
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