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BUV48A

Description
SWITCHMODE II Series NPN Silicon Power Transistors
CategoryDiscrete semiconductor    The transistor   
File Size167KB,8 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BUV48A Overview

SWITCHMODE II Series NPN Silicon Power Transistors

BUV48A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-based maximum capacity350 pF
Collector-emitter maximum voltage450 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment150 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)2400 ns
Maximum opening time (tons)900 ns
VCEsat-Max5 V
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Operating Temperature Range –65 to + 175
_
C
100
_
C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltage
Leakage Currents (125
_
C)
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Fast Turn–Off Times
60 ns Inductive Fall Time — 25
_
C (Typ)
120 ns Inductive Crossover Time — 25
_
C (Typ)
The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications such as:
SWITCHMODE is a trademark of Motorola, Inc.
SWITCHMODE II Series
NPN Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation — TC = 25
_
C
— TC = 100
_
C
Derate above 25
_
C
Base Current — Continuous
— Peak (1)
Collector Current — Continuous
— Peak (1)
— Overload
Emitter Base Voltage
Collector–Emitter Voltage (VBE = –1.5 V)
Collector–Emitter Voltage
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Characteristic
Rating
v
10%.
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VCEX
R
θJC
VEB
IC
ICM
IOI
IB
IBM
PD
TL
BUV48
850
400
15 AMPERES
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
V(BR)CEO
850 – 1000 VOLTS
V(BR)CEX
150 WATTS
– 65 to + 175
BUV48
BUV48A
Max
275
150
75
1
CASE 340D–01
TO–218 TYPE
15
30
60
5
20
1
7
Order this document
by BUV48/D
BUV48A
1000
450
Watts
W/
_
C
_
C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_
C
_
C
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Index Files: 259  2785  1706  2510  260  6  57  35  51  21 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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