BUV98V
NPN TRANSISTOR POWER MODULE
s
s
s
s
s
s
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
th
JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ISOLATED CASE (2500V RMS)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
WELDING EQUIPMENT
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
V
I SO
Parameter
Collector-Emitter Voltage (V
BE
= -5 V)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
= 10 ms)
Base Current
Base Peak Current (t
p
= 10 ms)
Tot al Dissipation at T
c
= 25 C
Storage Temperature
Max. Ope rating Junction Temperature
Insulation Withstand Voltage (AC-RMS)
o
Value
1000
450
7
30
60
8
16
150
-55 to 150
150
2500
Unit
V
V
V
A
A
A
A
W
o
o
o
V
CEO(sus)
Collector-Emitter Voltage (I
B
= 0)
C
C
C
1/7
September 1997
BUV98V
THERMAL DATA
R
thj-ca se
R
t hc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
o
Max
Max
0.83
0.05
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25 C unless otherwise specified)
Symbol
I
CER
I
CEV
I
EBO
Parameter
Collecto r Cut-of f
Current (R
BE
= 5
Ω)
Collecto r Cut-of f
Current (V
BE
= -5V)
Test Conditions
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
T
j
= 100
o
C
Min.
Typ.
Max.
1
8
0. 4
4
2
450
9
1. 5
3. 5
1. 6
t
p
= 3
µs
100
8
4
5
0. 4
V
V
V
A/µs
V
V
µs
µs
Unit
mA
mA
mA
mA
mA
V
Emitter Cut-off Current V
EB
= 5 V
(I
C
= 0)
I
C
= 0.2 A
L = 25 mH
V
c lamp
= 450 V
I
C
= 24 A
I
C
= 20 A
I
C
= 30 A
I
C
= 20 A
V
CE
= 5 V
I
B
= 4 A
I
B
= 8 A
I
B
= 4 A
V
CEO(SUS)
* Collecto r-Emitter
Sustaining Voltage
h
FE
∗
V
CE(sat )
∗
V
BE( sat)
∗
di
C
/dt
DC Current Gain
Collecto r-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Rate of Rise of
On-state Collector
V
CC
= 300 V R
C
= 0
I
B1
= 6 A T
j
= 100
o
C
•
V
CE
(3
µs)•
Collecto r-Emitter
Dynamic Voltage
•
V
CE
(5
µs)•
Collector-Emitte r
Dynamic Voltage
t
s
t
f
Storage Time
Fall Time
V
CC
= 300 V R
C
= 15
Ω
I
B1
= 6 A T
j
= 100
o
C
V
CC
= 300 V R
C
= 15
Ω
I
B1
= 6 A T
j
= 100
o
C
I
C
= 20 A
V
CC
= 50 V
V
BB
= -5 V
L
B
= 1.5
µH
V
c lamp
= 300 V I
B1
= 4 A
L = 750
µH
T
j
= 100
o
C
I
CW off
= 30 A
V
BB
= -5 V
L = 750
µH
T
j
= 125
o
C
I
B1
= 6 A
V
CC
= 50 V
L
B
= 15
µH
350
V
CEW
Maximum Collector
Emitter Voltage
With ou t Snubber
V
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/7
BUV98V
Safe Operating Areas
Thermal Impedance
Derating Curve
Collector-emitter Voltage Versus
base-emitter Resistance
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
BUV98V
Reverse Biased SOA
Foward Biased SOA
Reverse Biased AOA
Forward Biased AOA
Switching Times Inductive Load
Switching Times Inductive Load Versus
Temperature
4/7
BUV98V
Dc Current Gain
Turn-on Switching Test Circuit
(1) Fast electronics switch
(2) Non-inductive load
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
Turn-off Switching Waveforms
(1) Fast electronic switch
(3) Fast recovery rectifier
(2) Non-inductive load
5/7
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