DISCRETE SEMICONDUCTORS
DATA SHEET
BFR520
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
PIN
The BFR520 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
1
2
3
base
emitter
collector
DESCRIPTION
Code: N28
telephones (CT1, CT2, DECT, etc.),
radar detectors, pagers and satellite
TV tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistor is encapsulated in a
plastic SOT23 envelope.
PINNING
1
Top view
fpage
BFR520
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
up to T
s
= 97
°C;
note 1
I
C
= 20 mA; V
CE
= 6 V
I
C
= i
c
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz
I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
S
21
2
F
insertion power gain
noise figure
I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°C;
f = 2 GHz
Note
1. T
s
is the temperature at the soldering point of the collector tab.
R
BE
= 0
CONDITIONS
MIN.
−
−
−
−
60
−
−
−
−
13
−
−
−
TYP.
−
−
−
−
120
0.4
9
15
9
14
1.1
1.6
1.9
MAX.
20
15
70
300
250
−
−
−
−
−
1.6
2.1
−
pF
GHz
dB
dB
dB
dB
dB
dB
UNIT
V
V
mA
mW
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 97
°C;
note 1
open emitter
R
BE
= 0
open collector
CONDITIONS
MIN.
−
−
−
−
−
−65
−
BFR520
MAX.
20
15
2.5
70
300
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
from junction to soldering point (note 1)
THERMAL RESISTANCE
260 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain (note 1)
CONDITIONS
I
E
= 0; V
CB
= 6 V
I
C
= 20 mA; V
CE
= 6 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz
I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
S
21
2
F
insertion power gain
noise figure
I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 20 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
P
L1
ITO
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
-------------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
BFR520
MIN. TYP. MAX.
−
60
−
−
−
−
−
−
13
−
−
−
−
−
−
120
1
0.5
0.4
9
15
9
14
1.1
1.6
1.9
17
26
50
250
−
−
−
−
−
−
−
1.6
2.1
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
output power at 1 dB gain
compression
third order intercept point
I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
Ω;
T
amb
= 25
°C;
f = 900 MHz
note 2
2. I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
Ω;
T
amb
= 25
°C;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at f
(2p−q)
= 898 MHz and f
(2q−p)
= 904 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520
MRA702 - 1
MRA703
400
handbook, halfpage
Ptot
(mW)
300
handbook, halfpage
250
hFE
200
150
200
100
100
50
0
0
50
100
150
Ts
(
o
C)
200
0
10
−2
10
−1
1
10 I (mA) 10
2
C
V
CE
= 6 V.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector
current.
handbook, halfpage
0.6
MRA704
MRA705
handbook, halfpage
12
Cre
(pF)
fT
(GHz)
8
VCE = 6V
0.4
VCE = 3V
0.2
4
0
0
4
8
VCB (V)
12
0
10
−1
1
10
IC (mA)
10
2
i
C
= 0; f = 1 MHz.
T
amb
= 25
°C;
f = 1 GHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
September 1995
5
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