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BUW11F

Description
Silicon diffused power transistors
CategoryDiscrete semiconductor    The transistor   
File Size69KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BUW11F Overview

Silicon diffused power transistors

BUW11F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)5 A
ConfigurationSingle
Minimum DC current gain (hFE)10
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)32 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
DISCRETE SEMICONDUCTORS
DATA SHEET
BUW11F; BUW11AF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
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