DISCRETE SEMICONDUCTORS
DATA SHEET
BUW11W; BUW11AW
Silicon diffused power transistors
Product specification
File under Discrete Semiconductors, SC06
1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT429 package.
e
BUW11W; BUW11AW
APPLICATIONS
•
Converters
•
Inverters
•
Switching regulators
•
Motor control systems.
MBB008
2
1
3
PINNING
PIN
1
2
3
DESCRIPTION
base
collector; connected to
mounting base
emitter
1
2
3
MBK117
Fig.1 Simplified outline (SOT429) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CESM
BUW11W
BUW11AW
V
CEO
collector-emitter voltage
BUW11W
BUW11AW
V
CEsat
I
C
I
CM
P
tot
t
f
collector-emitter saturation voltage
collector current (DC)
collector current (peak value)
total power dissipation
fall time
see Figs 7 and 9
see Figs 2 and 4
see Fig 2
T
mb
≤
25
°C;
see Fig.3
resistive load; see Figs 11 and 12
open base
400
450
1.5
5
10
100
0.8
V
V
V
A
A
W
µs
PARAMETER
collector-emitter peak voltage
V
BE
= 0
850
1000
V
V
CONDITIONS
MAX.
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
thermal resistance from junction to mounting base
VALUE
1.25
UNIT
K/W
1997 Aug 14
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CESM
PARAMETER
collector-emitter peak voltage
BUW11W
BUW11AW
V
CEO
collector-emitter voltage
BUW11W
BUW11AW
I
Csat
collector saturation current
BUW11W
BUW11AW
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
t
p
< 2 ms
T
mb
≤
25
°C;
see Fig.3
see Figs 2 and 4
t
p
< 2 ms; see Fig 2
open base
V
BE
= 0
CONDITIONS
BUW11W; BUW11AW
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
MAX.
850
1000
400
450
3
2.5
5
10
2
4
100
+150
150
V
V
V
V
A
A
A
A
A
A
W
UNIT
°C
°C
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
CEOsust
PARAMETER
CONDITIONS
MIN.
400
450
I
C
= 3 A; I
B
= 600 mA; see
Figs 7 and 9
I
C
= 2.5 A; I
B
= 500 mA; see
Figs 7 and 9
I
C
= 3 A; I
B
= 600 mA; see Fig.7
I
C
= 2.5 A; I
B
= 500 mA; see Fig.7
V
CE
= V
CESMmax
; V
BE
= 0; note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°C;
note 1
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
EB
= 9 V; I
C
= 0
V
CE
= 5 V; I
C
= 5 mA; see Fig.10
V
CE
= 5 V; I
C
= 500 mA;
see Fig.10
−
−
TYP.
−
−
−
−
MAX.
−
−
1.5
1.5
UNIT
V
V
V
V
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
= 0; L = 25 mH;
see Figs 5 and 6
BUW11W
BUW11AW
collector-emitter saturation voltage
BUW11W
BUW11AW
V
CEsat
V
BEsat
base-emitter saturation voltage
BUW11W
BUW11AW
−
−
−
−
−
10
10
−
−
−
−
−
18
20
1.4
1.4
1
2
10
35
35
V
V
mA
mA
mA
I
CES
collector-emitter cut-off current
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Switching times resistive load
(see Figs 11 and 12)
t
on
turn-on time
BUW11W
BUW11AW
t
s
storage time
BUW11W
BUW11AW
t
f
fall time
BUW11W
BUW11AW
I
Con
= 3 A; I
Bon
=
−I
Boff
= 600 mA
−
−
−
0.8
0.8
µs
µs
I
Con
= 2.5 A; I
Bon
=
−I
Boff
= 500 mA
−
I
Con
= 3 A; I
Bon
=
−I
Boff
= 600 mA
−
−
−
4
4
µs
µs
I
Con
= 2.5 A; I
Bon
=
−I
Boff
= 500 mA
−
I
Con
= 3 A; I
Bon
=
−I
Boff
= 600 mA
−
−
−
1
1
µs
µs
I
Con
= 2.5 A; I
Bon
=
−I
Boff
= 500 mA
−
Switching times inductive load
(see Figs 13 and 14)
t
s
storage time
BUW11W
I
Con
= 3 A; I
B
= 600 mA
I
Con
= 3 A; I
B
= 600 mA;
T
j
= 100
°C
BUW11AW
I
Con
= 2.5 A; I
B
= 500 mA
I
Con
= 2.5 A; I
B
= 500 mA;
T
j
= 100
°C
t
f
fall time
BUW11W
I
Con
= 3 A; I
B
= 600 mA
I
Con
= 3 A; I
B
= 600 mA;
T
j
= 100
°C
BUW11AW
I
Con
= 2.5 A; I
B
= 500 mA
I
Con
= 2.5 A; I
B
= 500 mA;
T
j
= 100
°C
Note
1. Measured with a half-sinewave voltage (curve tracer).
−
−
−
−
80
140
80
140
150
300
150
300
ns
ns
ns
ns
−
−
−
−
1.1
1.2
1.1
1.2
1.4
1.5
1.4
1.5
µs
µs
µs
µs
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11W; BUW11AW
handbook, full pagewidth
10
2
MGB948
IC
(A)
10
ICM max
IC max
(1)
II
1
I
10
−1
(2)
III
10
−2
DC
10
−3
10
BUW11W
BUW11AW
10
2
IV
10
3
VCE (V)
10
4
T
mb
≤
25
°C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided R
BE
≤
100
Ω
and t
p
≤
0.6
µs.
IV - Repetitive pulse operation in this region is permissible provided V
BE
≤
0 and t
p
≤
5 ms.
(1) P
tot max
line.
(2) Second breakdown limits.
Fig.2 Forward bias SOAR.
1997 Aug 14
4
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