DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BFS540
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1997 Dec 05
2000 May 30
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability
•
SOT323 package.
APPLICATIONS
RF wideband amplifier applications
such as satellite TV systems and RF
portable communication equipment
with signal frequencies up to 2 GHz.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
F
Note
1. T
s
is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
2000 May 30
2
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
T
s
≤
80
°C;
note 1
R
BE
= 0
open collector
CONDITIONS
open emitter
MIN.
−
−
−
−
−
−65
−
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
T
s
≤
80
°C;
note 1
I
C
= 40 mA; V
CE
= 8 V; T
j
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
°C
I
C
= 10 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
°C
open base
CONDITIONS
open emitter
MIN.
−
−
−
−
100
−
−
−
TYP.
−
−
−
−
120
9
14
1.3
PINNING
PIN
1
2
3
base
emitter
collector
Marking code:
N4.
Top view
BFS540
DESCRIPTION
NPN transistor in a SOT323 plastic
package.
handbook, 2 columns
3
DESCRIPTION
1
2
MBC870
Fig.1 SOT323.
MAX.
20
15
120
500
250
−
−
1.7
UNIT
V
V
mA
mW
GHz
dB
dB
MAX.
20
15
2.5
120
500
150
175
UNIT
V
V
V
mA
mW
°C
°C
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CE
= 8 V
I
C
= 40 mA; V
CE
= 8 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
MIN.
−
100
−
−
−
−
−
−
12
−
−
−
−
−
TYP.
−
120
2
0.9
0.6
9
14
8
13
1.3
1.9
2.1
21
34
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
T
s
≤
80
°C;
note 1
BFS540
VALUE
190
UNIT
K/W
MAX.
50
250
−
−
−
−
−
−
−
1.8
2.4
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
maximum unilateral power gain I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
(note 1)
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
°C
|s
21
|
2
F
insertion power gain
noise figure
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°C
Γ
s
=
Γ
opt
; I
C
= 10 mA; V
CE
= 8 V;
f = 2 GHz; T
amb
= 25
°C
P
L1
ITO
Notes
output power at 1 dB gain
compression
third order intercept point
I
c
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
f = 900 MHz; T
amb
= 25
°C
note 2
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero and
G
UM
s
21
-
=
10 log
-------------------------------------------------------
dB.
2
2
(
1
–
s
11
) (
1
–
s
22
)
2
2. I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
f = 900 MHz; T
amb
= 25
°C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at f
(2p−q)
= 898 MHz and at f
(2q−p)
= 904 MHz.
2000 May 30
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
MRC008 - 1
400
handbook, halfpage
Ptot
(mW)
300
handbook, halfpage
200
MRC010
h FE
150
200
100
100
50
0
0
50
100
150
Ts (
o
C)
200
0
10
−2
10
−1
1
10
IC (mA)
10
2
V
CE
= 8 V; T
j
= 25
°C.
V
CE
≤
10 V.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current.
handbook, halfpage
1
MRC001
Cre
handbook, halfpage
12
MRC002
(pF)
0.8
fT
(GHz)
VCE = 8 V
8
0.6
4V
0.4
4
0.2
0
0
2
4
6
8
10
12
VCB (V)
0
1
10
I C (mA)
10
2
I
C
= 0; f = 1 MHz.
f = 1 GHz; T
amb
= 25
°C.
Fig.4
Feedback capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
2000 May 30
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
In Figs 6 to 9, G
UM
= maximum unilateral power gain;
MSG = maximum stable gain; G
max
= maximum available
gain.
BFS540
handbook, halfpage
20
GUM
(dB)
16
MRC007
handbook, halfpage
15
MRC006
gain
(dB)
VCE = 8 V
4V
10
12
G max
GUM
8
5
4
0
0
10
20
30
f = 900 MHz; T
amb
= 25
°C.
40
50
IC (mA)
0
0
20
40
IC (mA)
60
V
CE
= 8 V; f = 2 GHz; T
amb
= 25
°C.
Fig.6
Maximum unilateral power gain as a
function of collector current.
Fig.7 Gain as a function of collector current.
handbook, halfpage
50
MRC004
handbook, halfpage
50
MRC005
gain
(dB)
40
G UM
30
MSG
20
G max
10
gain
(dB)
40
G UM
30
MSG
20
10
G max
0
10
−2
10
−1
1
f (GHz)
10
0
10
−2
10
−1
1
f (GHz)
10
I
C
= 10 mA; V
CE
= 8 V; T
amb
= 25
°C.
I
C
= 40 mA; V
CE
= 8 V; T
amb
= 25
°C.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
2000 May 30
5
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