DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGY1085A
1000 MHz, 18.5 dB gain push-pull
amplifier
Product specification
Supersedes data of 1997 Apr 15
2001 Oct 25
Philips Semiconductors
Product specification
1000 MHz, 18.5 dB gain push-pull amplifier
FEATURES
•
Excellent linearity
•
Extremely low noise
•
Silicon nitride passivation
•
Rugged construction
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
Hybrid high amplifier module for
CATV systems operating over a
frequency range of 40 to 1000 MHz
at a supply voltage of +24 V (DC).
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
PARAMETER
power gain
CONDITIONS
f = 50 MHz
f = 1000 MHz
total current consumption (DC) V
B
= 24 V
18
18.5
−
MIN.
19
−
240
PINNING - SOT115J
PIN
1
2
3
5
7
8
9
input
common
common
+V
B
common
common
output
Side view
BGY1085A
DESCRIPTION
fpage
1
2
3
8
5 7 9
MSA319
Fig.1 Simplified outline.
MAX.
dB
dB
UNIT
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
i
T
stg
T
mb
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
−
−40
−20
MIN.
65
+100
+100
MAX.
°C
°C
UNIT
dBmV
2001 Oct 25
2
Philips Semiconductors
Product specification
1000 MHz, 18.5 dB gain push-pull amplifier
CHARACTERISTICS
Table 1
Bandwidth 40 to 1000 MHz; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 1000 MHz
SL
FL
S
11
f = 40 to 1000 MHz
f = 40 to 1000 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 1000 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 1000 MHz
CTB
composite triple beat
85 channels flat;
V
o
= 44 dBmV;
measured at 595.25 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 745.25 MHz
150 channels flat;
V
o
= 40 dBmV;
measured at 985.25 MHz
X
mod
cross modulation
85 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
150 channels flat;
V
o
= 40 dBmV;
measured at 55.25 MHz
CSO
composite second order
distortion
85 channels flat;
V
o
= 44 dBmV;
measured at 596.5 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 746.5 MHz
150 channels flat;
V
o
= 40 dBmV;
measured at 986.5 MHz
MIN.
18
18.5
0
−
20
18.5
17
15.5
14
20
18.5
17
15.5
14
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
TYP.
BGY1085A
SYMBOL
G
p
MAX.
19
−
2
±0.3
−
−
−
−
−
−
−
−
−
−
−58
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
−
−
−53
dB
−
−53
−
dB
−
−
−58
dB
−
−
−54
dB
−
−54
−
dB
−
−
−60
dB
−
−
−56
dB
−
−56
−
dB
2001 Oct 25
3
Philips Semiconductors
Product specification
1000 MHz, 18.5 dB gain push-pull amplifier
BGY1085A
SYMBOL
d
2
PARAMETER
second order distortion
note 1
note 2
note 3
CONDITIONS
−
−
−
MIN.
−
−
TYP.
MAX.
−72
−65
−
−
−
−
5.5
6
6
6.5
7
7.5
7.5
240
UNIT
dB
dB
dB
dBmV
dBmV
dBmV
dB
dB
dB
dB
dB
dB
dB
mA
−68
−
−
−
−
−
−
−
−
−
−
−
V
o
output voltage
d
im
=
−60
dB
note 4
note 5
note 6
61
60
57
−
−
−
−
−
−
−
−
F
noise figure
f = 50 MHz
f = 550 MHz
f = 600 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
f = 1000 MHz
I
tot
Notes
total current consumption (DC)
note 7
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 541.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 596.5 MHz.
2. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
3. f
p
= 55.25 MHz; V
p
= 40 dBmV;
f
q
= 931.25 MHz; V
q
= 40 dBmV;
measured at f
p
+ f
q
= 986.5 MHz.
4. f
p
= 590.25 MHz; V
p
= V
o
;
f
q
= 597.25 MHz; V
q
= V
o
−6
dB;
f
r
= 599.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 588.25 MHz.
5. f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
−6
dB;
f
r
= 749.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 738.25 MHz.
6. f
p
= 980.25 MHz; V
p
= V
o
;
f
q
= 987.25 MHz; V
q
= V
o
−6
dB;
f
r
= 989.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 978.25 MHz.
7. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 25
4
Philips Semiconductors
Product specification
1000 MHz, 18.5 dB gain push-pull amplifier
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
BGY1085A
SOT115J
D
E
Z
p
A2
1
A
L
F
S
W
d
U2
B
y
M
B
p
Q
e
e1
q2
q1
y
M
B
y
M
B
b
w
M
2
3
5
7
8
9
c
U1
q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
9.1
b
c
d
D
E
max. max. max.
e
e1
F
L
min.
8.8
p
4.15
3.85
Q
max.
2.4
q
q1
q2
S
U1
max.
U2
8
W
w
y
0.1
Z
max.
3.8
mm 20.8
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
38.1 25.4 10.2
4.2 44.75
6-32 0.25
UNC
OUTLINE
VERSION
SOT115J
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-02-06
2001 Oct 25
5
京公网安备 11010802033920号
EEWORLD
