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HDBLS105G

Description
1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size398KB,4 Pages
ManufacturerTM Technology, Inc.
Websitehttp://www.tmtech.com.tw/
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HDBLS105G Overview

1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

HDBLS105G Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage600 V
Maximum average input current1 A
Processing package descriptionGREEN, PLASTIC, DBLS, 4 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingPURE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage600 V
Maximum non-repetitive peak forward current50 A
HDBLS101G - HDBLS107G
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Glass Passivated High Efficient Bridge Rectifiers
FEATURES
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DBLS
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Weight:
0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 1 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
t
rr
R
θJL
R
θJA
T
J
T
STG
50
15
40
- 55 to +150
- 55 to +150
1.0
HDBLS HDBLS HDBLS HDBLS HDBLS HDBLS HDBLS
101G
50
35
50
102G
100
70
100
103G
200
140
200
104G
400
280
400
1
50
10.3
1.3
5
500
75
1.7
105G
600
420
600
106G
800
560
800
107G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
μA
ns
°C/W
°C
°C
Document Number: DS_D1310040
Version: F15

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