EFC6611R
Power MOSFET
for 1-Cell Lithium-ion Battery Protection
12V, 3.2mΩ, 27A, Dual N-Channel
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This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for 1-cell lithium-ion battery applications.
Features
2.5V drive
2kV ESD HBM
Common-Drain Type
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Applications
1-Cell Lithium-ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
at Ta = 25C
(Note 1)
Parameter
Source to Source Voltage
Gate to Source Voltage
Symbol
VSSS
VGSS
IS
Value
12
8
27
Unit
V
V
A
VSSS
RSS(on) Max
3.2mΩ@ 4.5V
3.2mΩ@ 4.0V
3.2mΩ@ 3.8V
4.4mΩ@ 3.1V
6.3mΩ@ 2.5V
IS Max
12V
27A
ELECTRICAL CONNECTION
N-Channel
4, 6
Rg
5
Rg
2
Source Current (DC)
Source Current (Pulse)
A
ISP
100
PW100s, duty cycle1%
Total Dissipation
PT
Surface mounted on ceramic substrate
2.5
W
2
(5000mm
0.8mm)
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55
to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Rg=200Ω
1, 3
1 : Source1
2 : Gate1
3 : Source1
4 : Source2
5 : Gate2
6 : Source2
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
Surface mounted on ceramic substrate
2
(5000mm
0.8mm)
Symbol
R
JA
Value
50
Unit
C/W
CSP6, 1.77x3.54 /
EFCP3517-6DGH-020
MARKING
ML
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
March 2016 - Rev. 2
1
Publication Order Number :
EFC6611R/D
EFC6611R
ELECTRICAL CHARACTERISTICS
at Ta
½
25C
(Note 2)
Parameter
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Symbol
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
RSS(on)5
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
VSS=6V, VGS=4.5V, IS=27A Test Circuit 7
VSS=6V, VGS=4.5V, IS=3A Test Circuit 6
Conditions
IS=1mA, VGS=0V
VSS=10V, VGS=0V
VGS=8V, VSS=0V
VSS=6V, IS=1mA
VSS=6V, IS=3A
IS=5A, VGS=4.5V
IS=5A, VGS=4.0V
IS=5A, VGS=3.8V
IS=5A, VGS=3.1V
IS=5A, VGS=2.5V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
1.8
1.9
2.0
2.1
2.7
0.5
19
2.3
2.4
2.6
3.3
4.0
80
570
38,000
17,700
100
3.2
3.2
3.2
4.4
6.3
Value
min
12
1
1
1.3
typ
max
Unit
V
A
A
V
S
m
m
m
m
m
ns
ns
ns
ns
nC
Static Source to Source On-State
Resistance
Forward Source to Source Voltage
IS=3A, VGS=0V
Test Circuit 8
0.75
1.2
V
VF(S-S)
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
EFC6611R
Test circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
S2
G2
A
Test Circuit 2
IGSS
S2
G2
G1
S1
VSS
VGS
A
G1
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 3
VGS(th)
S2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 4
gFS
S2
G2
A
A
G1
VGS
VSS
G1
VGS
VSS
S1
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 5
RSS(on)
S2
Test Circuit 6
td(on), tr, td(off), tf
S2
IS
G2
RL
G2
V
G1
VGS
V
G1
S1
S1
PG
VSS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 7
Qg
S2
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 8
VF(S-S)
S2
IS
G2
G2
IG =1mA
V
G1
S1
RL
VGS=0V
G1
S1
When FET1 is
measured,+4.5V is added to
V
GS
of FET2.
PG
VSS
When FET2 is measured, the position of FET1 and FET2 is switched.
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3
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