Philips Semiconductors
Product specification
HF/VHF power MOS transistor
FEATURES
•
High power gain
•
Low intermodulation distortion
•
Easy power control
•
Good thermal stability
•
Withstands full load mismatch.
andbook, halfpage
4
BLF177
PIN CONFIGURATION
3
d
APPLICATIONS
•
Designed for industrial and military
applications in the HF/VHF
frequency range.
1
2
MLA876
g
MBB072
s
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
encapsulated in a 4-lead, SOT121B
flanged package, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source
voltage (V
GS
) information is provided
for matched pair applications. Refer
to the handbook 'General' section for
further information.
PINNING
PIN
1
2
3
4
drain
source
gate
source
DESCRIPTION
Fig.1 Simplified outline (SOT121B) and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source test circuit.
MODE OF
OPERATION
SSB class-AB
CW class-B
f
(MHz)
28
108
V
DS
(V)
50
50
P
L
(W)
150 (PEP)
150
G
p
(dB)
>20
typ. 19
η
D
(%)
>35
typ. 70
d
3
(dB)
<−30
−
d
5
(dB)
<−30
−
1998 Jul 02
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
T
mb
≤
25
°C
CONDITIONS
−
−
−
−
−65
−
MIN.
BLF177
MAX.
110
±20
16
220
150
200
V
V
A
W
UNIT
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
VALUE
max. 0.8
max. 0.2
UNIT
K/W
K/W
handbook, halfpage
10
2
MRA906
300
handbook, halfpage
Ptot
(W)
200
(1)
MGP089
ID
(A)
10
(1)
(2)
(2)
1
100
10
−1
1
10
10
2
VDS (V)
10
3
0
0
50
100
Th (°C)
150
(1) Current in this area may be limited by R
DSon
.
(2) T
mb
= 25
°C.
(1) Short-time operation during mismatch.
(2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1998 Jul 02
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GSth
∆V
GS
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
I
D
= 50 mA; V
GS
= 0
V
GS
= 0; V
DS
= 50 V
V
GS
=
±20
V; V
DS
= 0
I
D
= 50 mA; V
DS
= 10 V
I
D
= 50 mA; V
DS
= 10 V
I
D
= 5 A; V
DS
= 10 V
I
D
= 5 A; V
GS
= 10 V
V
GS
= 10 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
V
GS
= 0; V
DS
= 50 V; f = 1 MHz
MIN.
110
−
−
2
−
4.5
−
−
−
−
−
TYP.
−
−
−
−
−
6.2
0.2
25
480
190
14
BLF177
MAX.
−
2.5
1
4.5
100
−
0.3
−
−
−
−
UNIT
V
mA
µA
V
mV
S
Ω
A
pF
pF
pF
MGP090
0
handbook, halfpage
T.C.
(mV/K)
−1
30
handbook, halfpage
ID
(A)
20
MGP091
−2
−3
10
−4
−5
10
−2
10
−1
0
1
ID (A)
10
0
5
10
VGS (V)
15
V
DS
= 10 V; valid for T
h
= 25 to 70
°C.
V
DS
= 10 V.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Fig.5
Drain current as a function of gate-source
voltage; typical values.
1998 Jul 02
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
400
handbook, halfpage
RDSon
(mΩ)
300
MGP092
handbook, halfpage
1200
MBK408
C
(pF)
800
Cis
200
400
Cos
100
0
50
100
Tj (°C)
150
0
0
20
40
VDS (V)
60
I
D
= 5 A; V
GS
= 10 V.
V
GS
= 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values.
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values.
handbook, halfpage
300
MGP093
Crs
(pF)
200
100
0
0
10
20
30
40
50
VDS (V)
V
GS
= 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values.
1998 Jul 02
5
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