Philips Semiconductors
Product specification
NPN high voltage
Power transistor
FEATURES
• Fast switching
• Excellent thermal stability
• High thermal cycling performance
• Low thermal resistance
• Surface mounting package
BUX84S
SYMBOL
c
b
e
QUICK REFERENCE DATA
V
CESM
= 800 V
V
CEO
= 400 V
I
C
= 2 A
V
CE(SAT)
≤
1 V (I
C
= 1 A)
t
f
= 0.4
µs
(typ)
GENERAL DESCRIPTION
High voltage, high speed glass
passivated NPN power transistor in
a plastic package.
Applications:-
Off-line SMPS
TV and monitor power supplies
Inverters
Electronic lighting ballasts
The BUX84S is supplied in the
SOT428 (DPAK) surface mounting
package.
PINNING
PIN
1
2
3
4
base
collector
1
emitter
DESCRIPTION
SOT428
tab
2
collector (tab)
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
CESM
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
j
, T
stg
Collector-emitter voltage
(peak value)
Collector-emitter voltage
(DC)
Emitter-base voltage
Collector current (DC)
Collector current (peak
value)
Base current (DC)
Base current (peak value)
Reverse base current (peak
value during turn-off)
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
V
BE
= 0 V
base open circuit
collector open circuit
t
p
= 2 ms
MIN.
-
-
-
-
-
-
-
-
T
mb
= 25 ˚C
-
- 65
MAX.
800
400
5
2
3
0.75
1
1
50
150
UNIT
V
V
V
A
A
A
A
A
W
˚C
1
It is not possible to make connection to pin:2 of the SOT428 package.
February 1999
1
Rev 1.000
Philips Semiconductors
Product specification
NPN high voltage
Power transistor
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
pcb mounted, FR4 board, minimum
footprint
-
BUX84S
TYP. MAX. UNIT
-
50
2.5
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
For characteristic curves, refer to BUX84 data sheet.
SYMBOL PARAMETER
V
CEO(sust
V
CE(SAT)
V
BE(SAT)
I
CES
I
EBO
h
FE
f
T
t
on
t
f
t
s
Collector-emitter sustaining
voltage
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Collector-emitter cut-off
current
Emitter-base cut-off current
DC current gain
Transition frequency
Turn-on time
Fall time
Storage time
CONDITIONS
I
C
= 100 mA; I
B(OFF)
= 0 A; L = 25 mH
I
C
= 0.3 A; I
B
= 30 mA
I
C
= 1 A; I
B
= 0.2 A
I
C
= 1 A; I
B
= 0.2 A
V
CEM
= 800 V; V
BE
= 0 V
V
CEM
= 800 V; V
BE
= 0 V; T
j
= 125˚C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 5 mA
V
CE
= 5 V; I
C
= 100 mA
V
CE
= 10 V; I
C
= 200 mA; f = 1 MHz
I
C(on)
= 1 A; I
B(on)
= 200 mA; I
B(off)
= -400 mA;
V
CC
= 250 V
T
j
= 25˚C
T
j
= 95˚C
MIN.
400
-
-
-
-
-
-
15
20
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
-
-
-
-
50
20
0.2
0.4
-
2
-
0.8
1
1.1
200
1.5
1
-
100
-
0.5
-
1.4
3.5
V
V
V
V
µA
mA
mA
MHz
µs
µs
µs
µs
February 1999
2
Rev 1.000
Philips Semiconductors
Product specification
NPN high voltage
Power transistor
MECHANICAL DATA
Plastic surface mounted package (Philips version of D-PAK); 2 leads
SOT428
BUX84S
seating plane
y
A
E
b2
A
A1
A2
D1
E1
D
HE
L2
L
L1
1
b1
e
e1
b
2
w
M
A
c
0
10
scale
20 mm
DIMENSIONS (mm are the original dimensions)
A
UNIT max.
mm
2.38
2.22
A1
(1)
0.65
0.45
A2
0.89
0.71
b
0.89
0.71
b1
max.
1.1
0.9
b2
5.36
5.26
c
0.4
0.2
D1
E
D
max. max. max.
6.22
5.98
4.81
4.45
6.73
6.47
E1
min.
4.0
e
e1
HE
max.
10.4
9.6
L
2.95
2.55
L1
min.
0.5
L2
0.7
0.5
w
0.2
y
max.
0.2
2.285 4.57
Note
1. Measured from heatsink back to lead.
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-11
Fig.1. SOT428 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
February 1999
3
Rev 1.000
Philips Semiconductors
Product specification
NPN high voltage
Power transistor
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
BUX84S
7.0
2.15
2.5
1.5
4.57
Fig.2. SOT428 : soldering pattern for surface mounting.
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
4
Rev 1.000
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