Transient Voltage Suppressors for ESD Protection
LC3304EP8
Description
The LC3304EP8 is low capacitance TVS arrays designed
to protect high speed data interfaces. This series has been
specifically designed to protect sensitive
components
which are connected to high-speed data and transmission
lines from over-voltage caused by ESD (electrostatic
discharge), CDE (Cable Discharge Events), and EFT
(electrical fast transients).
SOP-08
Feature
450 Watts Peak Pulse Power per Line (tp=8/20µs)
Protects two line pairs (four lines)
Low capacitance
RoHS Compliant
IEC61000-4-2 (ESD)
±30kV
(air),
±30kV
(contact) -- A Pair
IEC61000-4-4 (EFT) 40A (5/50ηs)
IEC61000-4-5 (Lightning) 25A (8/20µs) -- A Pair
Functional Diagram
Applications
High-Speed Data Lines
10/100/1000 Ethernet
WAN/LAN Equipment
Test & Measurement Equipment
Switching Systems
Instrumentation
Audio/Video Inputs
Mechanical Data
JEDEC SOP-08 Package
Molding Compound Flammability Rating : UL 94V-O
Weight 70 Millgrams (Approximate)
Quantity Per Reel : 500pcs
Reel Size : 7 inch
Lead Finish : Lead Free
Mechanical Characteristics
Symbol
Ppp
T
J
T
STG
T
L
Parameter
Peak Pulse Power (tp=8/20µs waveform)
Operating Junction Temperature Range
Storage Temperature Range
Soldering Temperature Range
Value
450
-55 to +150
-55 to +150
260
Units
Watts
ºC
ºC
ºC
UN Semiconductor Co., Ltd.
Revision December 18, 2013
www.unsemi.com.tw
1/3
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors for ESD Protection
LC3304EP8
Electrical Characteristics
(@ 25℃ Unless Otherwise Specified )
Characteristics
Reverse Working
Voltage
Reverse Breakdown
Voltage
Reverse Leakage
Current
Positive Clamping
Voltage
Capacitance
Between I/O And
GND
C
J
V
R
=0V,f=1MHz;
--
--
2
pF
V
C
Symbol
V
RWM
Test Conditions
--
Min.
--
Typ.
3.3
Max.
--
Unit
V
V
BR
I
T
=1mA
3.5
--
--
V
I
R
I
PP
=1A;
I
PP
=25A;
--
--
--
--
--
--
--
0.1
μA
V
V
6.4
18
Characteristic Curves
Fig1. 8/20μs Pulse Waveform
Fig2.ESD Pulse Waveform (according to IEC 61000-4-2)
100%
90%
Percent of Peak Pulse
Current %
10%
tr
0.7~1ns
30ns
=
60ns
Time
(ns)
Fig3. Non-Repetitive peak pulse power vs.
Pulse Time
Fig4.
Insertion loss S21
UN Semiconductor Co., Ltd.
Revision December 18, 2013
www.unsemi.com.tw
2/3
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors for ESD Protection
LC3304EP8
SOP-08 Package Outline & Dimensions
UN Semiconductor Co., Ltd.
Revision December 18, 2013
www.unsemi.com.tw
3/3
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.