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NDD60N745U1T4G

Description
N-Channel Power MOSFET
File Size146KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NDD60N745U1T4G Overview

N-Channel Power MOSFET

NDD60N745U1
N-Channel Power MOSFET
600 V, 745 mW
Features
100% Avalanche Tested
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
Power Dissipation
– R
qJC
Pulsed Drain
Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
,
T
STG
I
S
EAS
dv/dt
T
L
Symbol
V
DSS
V
GS
I
D
Value
600
±25
6.6
4.2
84
27
−55
to
+150
6.6
38
15
260
W
A
°C
A
mJ
V/ns
°C
1
Unit
V
V
A
http://onsemi.com
V
(BR)DSS
600 V
R
DS(ON)
MAX
745 mW @ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
4
t
p
= 10
ms
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
D
= 2.5 A)
Peak Diode Recovery (Note 1)
Lead Temperature for Soldering Leads
4
1 2
3
IPAK
CASE 369D
STYLE 2
4
2
3
DPAK
CASE 369C
STYLE 2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. I
SD
< 6.6 A, di/dt
400 A/ms, V
DS peak
V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
NDD60N745U1
Symbol
R
qJC
R
qJA
Value
1.5
47
98
95
Unit
°C/W
°C/W
3
IPAK
CASE 369AD
STYLE 2
12
Junction−to−Ambient Steady State
(Note 3)
NDD60N745U1
(Note 2)
NDD60N745U1−1
(Note 2)
NDD60N745U1−35
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127 in sq [2 oz] including traces)
©
Semiconductor Components Industries, LLC, 2013
December, 2013
Rev. 0
1
Publication Order Number:
NDD60N745U1/D

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