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FR102G

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size36KB,1 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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FR102G Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
FR101G THRU FR107G
FAST RECOVERY PLASTIC RECTIFIER
VOLTAGE:50-1000V
CURRENT:1.0A
FEATURES
·Fast
switching
·Low
leakage
·Low
forward voltage drop
·High
current capability
·High
surge capability
·High
reliability
DO-41
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.034(0.9)
.028(0.7)
DIA.
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.33 grams
.107(2.7)
.080(2.0)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
FR101GFR102G FR103GFR104G FR105GFR106G FR107G
units
V
V
V
A
A
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
A
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at
1.0A DC
Maximum DC Reverse Current at Rated DC
Blocking Voltage T
A
=25°C
Maximum Full Load Reverse Current Full Cycle
Average,.375”(9.5mm) lead length at T
L
=75°C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Notes:
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
50
35
50
100
70
100
200
140
200
400
280
400
1.0
50
1.3
5.0
600
420
600
800
560
800
1000
700
1000
I
R
100
t
rr
C
J
150
15
250
500
µA
nS
pF
1.Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0 volts
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FR102G FR101G FR103G FR106G FR105G FR104G
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