DISCRETE SEMICONDUCTORS
DATA SHEET
BUX84; BUX85
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
APPLICATIONS
•
Converters
•
Inverters
•
Switching regulators
•
Motor control systems
•
Switching applications.
1
MBB008
MBK106
BUX84; BUX85
PINNING
PIN
1
2
3
base
collector; connected to mounting base
emitter
DESCRIPTION
2
3
1 2 3
Fig.1 Simplified outline (TO-220AB) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CESM
BUX84
BUX85
V
CEO
collector-emitter voltage
BUX84
BUX85
V
CEsat
I
C
I
CM
P
tot
t
f
collector-emitter saturation voltage
collector current (DC)
collector current (peak value)
total power dissipation
fall time
I
C
= 1 A; I
B
= 200 mA; see Fig.7
see Figs 4 and 5
see Figs 4 and 5
T
mb
≤
25
°C;
see Fig.8
resistive load; see Fig.11
open base
−
−
−
−
−
−
0.4
400
450
1
2
3
40
−
V
V
V
A
A
W
µs
PARAMETER
collector-emitter peak voltage
V
BE
= 0
−
−
800
1000
V
V
CONDITIONS
TYP.
MAX.
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from junction to ambient in free air
VALUE
2.5
70
UNIT
K/W
K/W
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CESM
BUX84
BUX85
V
CEO
collector-emitter voltage
BUX84
BUX85
I
C
I
CM
I
B
I
BM
I
BM
P
tot
T
stg
T
j
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
base current (reversed; peak value) turn-off current
total power dissipation
storage temperature
junction temperature
T
mb
≤
25
°C;
see Fig.8
see Figs 4 and 5
t
p
= 2 ms; see Figs 4 and 5
open base
−
−
−
−
−
−
−
−
−65
−
PARAMETER
collector-emitter peak voltage
V
BE
= 0
−
−
CONDITIONS
BUX84; BUX85
MIN.
MAX.
800
1000
400
450
2
3
0.75
1
−1
40
+150
150
V
V
V
V
A
A
A
A
A
W
UNIT
°C
°C
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
CEOsust
BUX84
BUX85
V
CEsat
collector-emitter saturation voltage
I
C
= 0.3 A; I
B
= 30 mA;
see Fig.7
PARAMETER
collector-emitter sustaining voltage
CONDITIONS
I
C
= 100 mA; I
Boff
= 0;
L = 25 mH; see Figs 2 and 3
MIN.
400
450
−
TYP.
−
−
−
−
−
−
−
−
−
50
20
MAX.
−
−
0.8
1
1.1
200
1.5
1
−
100
−
MHz
UNIT
V
V
V
V
V
µA
mA
mA
I
C
= 1 A; I
B
= 200 mA; see Fig.7
−
V
BEsat
I
CES
base-emitter saturation voltage
collector-emitter cut-off current
I
C
= 1 A; I
B
= 200 mA; see Fig.9
−
V
CEM
= V
CEMSmax
; V
BE
= 0;
note 1
V
CEM
= V
CEMSmax
; V
BE
= 0;
T
j
= 125
°C;
note 1
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 5 A; see Fig.10
V
CE
= 5 V; I
C
= 100 mA;
see Fig.10
f
T
transition frequency
V
CE
= 10 V; I
C
= 200 mA;
f = 1 MHz
−
−
−
15
20
−
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84; BUX85
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
TYP.
MAX.
UNIT
µs
µs
µs
Switching times in horizontal deflection circuit
(see Fig.11)
t
on
t
f
turn-on time
fall time
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
−400
mA; V
CC
= 250 V
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
−400
mA; V
CC
= 250 V
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
−400
mA; V
CC
= 250 V;
T
mb
= 95
°C
t
s
Note
1. Measured with a half-sinewave voltage (curve tracer).
storage time
I
Con
= 1 A; I
Bon
= 200 mA;
I
Boff
=
−400
mA; V
CC
= 250 V
0.2
0.4
−
0.5
−
1.4
−
2
3.5
µs
andbook, halfpage
+
50 V
100 to 200
Ω
L
I
halfpage
handbook,
C
(mA)
250
200
MGE239
horizontal
oscilloscope
100
vertical
300
Ω
1
Ω
MGE252
6V
30 to 60 Hz
0
VCE (V)
min
VCEOsust
Fig.2
Test circuit for collector-emitter
sustaining voltage.
Fig.3
Oscilloscope display for collector-emitter
sustaining voltage.
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUX84; BUX85
handbook, full pagewidth
10
MGB940
ICM max
IC
(A)
IC max
δ
= 0.01
tp =
2
µs
5
µs
10
µs
(1)
1
20
µs
50
µs
100
µs
200
µs
II
I
500
µs
10
−1
(2)
1 ms
2 ms
5 ms
10 ms
DC
10
−2
III
IV
10
−3
10
10
2
10
3
VCE (V)
10
4
BUX84.
T
mb
≤
50
°C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided R
BE
≤
100
Ω
and t
p
≤
0.6
µs.
IV - Repetitive pulse operation in this region is permissible provided V
BE
≤
0 and t
p
≤
2 ms.
(1) P
tot max
and P
tot peak max
lines.
(2) Second breakdown limits.
Fig.4 Forward bias SOAR.
1997 Aug 13
5
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