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BUX87P

Description
0.5 A, 450 V, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size37KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUX87P Overview

0.5 A, 450 V, NPN, Si, POWER TRANSISTOR

BUX87P Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)26
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)42 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P
BUX87P
GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
V
CESAT
I
C
I
CM
P
tot
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector-emitter saturation voltage
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
CONDITIONS
V
BE
= 0 V
I
C
= 0.2 A; I
B
= 20 mA
T
mb
25 ˚C
I
C
= 0.2 A; I
B(on)
= 20 mA
TYP.
BUX
-
-
-
-
-
-
0.28
MAX.
86P
800
400
1
0.5
1
42
-
87P
1000
450
V
V
V
A
A
W
µs
UNIT
PINNING - SOT82
PIN
1
2
3
DESCRIPTION
emitter
collector
base
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
Collector current (peak value) t
p
= 2 ms
Base current (DC)
Base current (peak value)
Reverse base current (peak value)
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
BUX
-
-
-
-
-
-
-
-
-
-40
-
MAX.
86P
800
400
87P
1000
450
5
0.5
1
0.2
0.3
0.3
42
150
150
V
V
V
A
A
A
A
A
W
˚C
˚C
UNIT
T
mb
25 ˚C
1
Turn-off current.
November 1995
1
Rev 1.100

BUX87P Related Products

BUX87P BUX86P
Description 0.5 A, 450 V, NPN, Si, POWER TRANSISTOR 0.5 A, 450 V, NPN, Si, POWER TRANSISTOR
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.5 A 0.5 A
Configuration Single Single
Minimum DC current gain (hFE) 26 26
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 42 W 42 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

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