Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX87-1100
GENERAL DESCRIPTION
High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the
dynamic focus circuit of televisions and monitors.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
MAX.
1100
700
0.5
1
46
UNIT
V
V
A
A
W
T
mb
≤
25 ˚C
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
emitter
collector
base
collector
PIN CONFIGURATION
tab
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current (peak value) t
p
= 2 ms
Base current (DC)
Base current (peak value)
Reverse base current (peak value)
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-40
-
MAX.
1100
700
0.5
1
0.2
0.3
0.3
46
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
mb
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
in free air
CONDITIONS
TYP.
-
60
MAX.
2.7
-
UNIT
K/W
K/W
1
Turn-off current.
November 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX87-1100
ELECTRICAL CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
h
FE
h
FE
C
ob
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
PARAMETER
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 5 V; I
C
= 0 A
I
C
= 50 mA; V
CE
= 5 V
I
C
= 20 mA; V
CE
= 5 V
V
CB
= 100 V; f = 1MHz
MIN.
-
-
-
26
26
-
TYP.
-
-
-
50
50
4.7
MAX.
100
1.0
1
125
150
-
UNIT
µA
mA
mA
pF
November 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX87-1100
2.5E-03
2.5 Collector current (mA)
60uA
2
120
110
100
90
80
70
60
50
40
30
20
10
0
8
10
PD%
Normalised Power Derating
2.0E-03
50uA
1.5
1.5E-03
40uA
1.0E-03
1
30uA
20uA
10uA
0
2
4 Vce (V) 6
5.0E-04
0.5
0.0E+00
0
0
20
40
60
80
100
Tmb / C
120
140
Fig.1. Typical transfer characteristics.
I
C
= f(V
CE
) ; parameter I
B
.
Collector current (A)
1.2mA
0.05
0.04
0.03
0.02
0.01
0
0
2
4 Vce (V) 6
8
10
0.98mA
10
Fig.4. Normalised power dissipation.
PD% = 100
⋅
PD/PD
25 ˚C
= f (T
mb
)
0.06
Zth / (K/W)
bux86p
0.5
0.78mA
1
0.2
0.1
0.05
0.58mA
0.38mA
0.18mA
0.01
0.1
P
D
tp
D=
t
p
T
t
0.02
T
D= 0
1.0E-06
0.0001
t/s
0.01
1
Fig.2. Typical transfer characteristics.
I
C
= f(V
CE
) ; parameter I
B
.
D.C Current Gain h
FE
0.78
Vce = 5V
Tj = 125 C
100
0.76
0.74
Tj = 25 C
Tj = -40 C
0.68
10
0.66
0.64
0.62
1
0.1
1
10
Collector current (mA)
100
0.6
0.72
0.7
Fig.5. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
VBESAT (V)
1000
Ic=100mA
Ic = 20 mA
Ic= 50mA
0
5
IB (mA) 10
15
20
Fig.3. Typical DC current gain.
h
FE
= f(I
C
); parameter V
CE
.
Fig.6. Typical base-emitter saturation voltage.
V
BEsat
= f(I
B
); parameter I
C
November 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX87-1100
10
Vce(sat) (V)
100
Output Capacitance Cob (pF)
1
Ic = 100mA
10
0.1
Ic=20mA
Ic = 50mA
0.01
0.1
1
IB (mA)
10
100
1
1
10
Vcb (V)
100
Fig.7. Typical collector-emitter saturation voltage.
V
CEsat
= f(I
B
); parameter I
C
Fig.8. Typical output capacitance C
OB
.
C
OB
= f(V
CB
);
November 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX87-1100
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.9. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1999
5
Rev 1.000
京公网安备 11010802033920号
EEWORLD
