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BUZ101S

Description
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
CategoryDiscrete semiconductor    The transistor   
File Size66KB,8 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BUZ101S Overview

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

BUZ101S Parametric

Parameter NameAttribute value
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)23 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1
Preliminary data
BUZ 101 S
SPP22N05
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
Pin 1
G
Type
BUZ 101 S
Pin 2
D
Pin 3
S
V
DS
55 V
I
D
22 A
R
DS(on)
0.06
Package
TO-220 AB
Ordering Code
Q67040-S4013-A2
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
22
16
Unit
A
I
D
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current
I
Dpuls
88
T
C
= 25 °C
Avalanche energy, single pulse
E
AS
90
mJ
I
D
= 22 A,
V
DD
= 25 V,
R
GS
= 25
L
= 372 µH,
T
j
= 25 °C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Reverse diode dv/dt
I
AR
E
AR
dv/dt
22
5.5
A
mJ
kV/µs
I
S
= 22 A,
V
DS
= 40 V, di
F
/dt = 200 A/µs
T
jmax
= 175 °C
Gate source voltage
Power dissipation
6
V
GS
P
tot
±
20
55
V
W
T
C
= 25 °C
Semiconductor Group
1
04/Nov/1997

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BUZ101S Q67040-S4013-A2
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