BUZ 102
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Pin 1
G
Type
BUZ 102
Pin 2
D
Pin 3
S
V
DS
50 V
I
D
42 A
R
DS(on)
0.023
Ω
Package
TO-220 AB
Ordering Code
C67078-S1351-A2
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
42
Unit
A
I
D
I
Dpuls
168
T
C
= 111 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
E
AS
180
dv/dt
6
mJ
I
D
= 42 A,
V
DD
= 25 V,
R
GS
= 25
Ω
L
= 102 µH,
T
j
= 25 °C
Reverse diode dv/dt
kV/µs
I
S
= 42 A,
V
DS
= 40 V, di
F
/dt = 200 A/µs
T
jmax
= 175 °C
Gate source voltage
Power dissipation
V
GS
P
tot
±
20
200
V
W
T
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 175
-55 ... + 175
≤
0.83
≤
75
E
55 / 175 / 56
°C
K/W
Semiconductor Group
1
07/96
BUZ 102
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSS
50
-
3
0.1
1
10
10
0.017
-
4
1
100
100
100
V
V
GS
= 0 V,
I
D,
T
j
= -40 °C
Gate threshold voltage
V
GS(th)
2.1
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
-
µA
nA
µA
nA
-
Ω
-
0.023
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= -40 °C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
I
GSS
R
DS(on)
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
V
GS
= 10 V,
I
D
= 42 A
Semiconductor Group
2
07/96
BUZ 102
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
10
28
1620
550
240
-
S
pF
-
2160
825
360
ns
-
25
38
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 42 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
Rise time
t
r
-
95
140
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
Turn-off delay time
t
d(off)
-
300
400
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
Fall time
t
f
-
160
215
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
Semiconductor Group
3
07/96
BUZ 102
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
C
= 25 °C
Inverse diode direct current,pulsed
A
-
-
-
-
1.2
75
0.12
42
168
V
-
1.7
ns
-
-
µC
-
-
Values
typ.
max.
Unit
I
SM
V
SD
t
rr
Q
rr
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 84 A
Reverse recovery time
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Semiconductor Group
4
07/96
BUZ 102
Power dissipation
P
tot
=
ƒ
(T
C
)
Drain current
I
D
=
ƒ
(T
C
)
parameter:
V
GS
≥
10 V
45
A
220
W
P
tot
180
160
I
D
35
30
140
120
100
80
60
10
40
5
20
0
0
0
20
40
60
80
100 120 140
°C
180
0
20
40
60
80
100 120 140
°C
180
25
20
15
T
C
T
C
Safe operating area
I
D
=
ƒ
(V
DS
)
parameter:
D
= 0.01,
T
C
= 25°C
10
3
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
0
A
K/W
I
D
10
2
/I
D
=
n)
(o
S
R
D
t
= 30.0µs
p
Z
thJC
10
-1
V
D
S
100 µs
1 ms
D = 0.50
0.20
10
1
10 ms
10
-2
0.10
0.05
0.02
DC
single pulse
10
0
0
10
10
-3
-7
10
0.01
10
1
V 10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
V
DS
t
p
Semiconductor Group
5
07/96
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