UNISONIC TECHNOLOGIES CO., LTD
2N70K
2 Amps, 700 Volts N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
2N70K
is a high voltage MOSFET designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high efficient
DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
= 6.3Ω@V
GS
= 10V
* Ultra Low gate charge (typical 8.1nC)
* Low reverse transfer capacitance (C
RSS
= typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
2N70KL-TN3-T
2N70KG-TN3-T
TO-252
2N70KL-TN3-R
2N70KG-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
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1 of 6
QW-R502-930, A
2N70K
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
2.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
8.0
A
40
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
2.8
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
30
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=45mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤2.0A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
Jc
RATINGS
110
4.24
UNIT
°С/W
°С/W
PARAMETER
Junction to Ambient
Junction to Case
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2 of 6
QW-R502-930, A
2N70K
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
Forward
Reverse
I
GSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250μA
V
DS
= 700V, V
GS
= 0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
700
10
100
-100
0.4
2.0
5.0
270
38
5
4.0
6.3
350
50
7
30
60
50
50
11
V
μA
nA
nA
V/°С
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
Breakdown Voltage Temperature
△
BV
DSS
/
△
T
J
I
D
= 250
μA,
Referenced to 25°C
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f =1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
Turn-On Rise Time
t
R
V
DD
=350V, I
D
=2.0A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=560V, V
GS
=10V, I
D
=2.0A
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
SD
= 2.0A
di/dt = 100 A/μs (Note1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
8.1
1.7
4.4
1.4
2.0
8.0
260
1.09
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3 of 6
QW-R502-930, A
2N70K
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-930, A
2N70K
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
E
AS
=
1
BV
DSS
LI
AS2
2
BV
DSS
- V
DD
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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5 of 6
QW-R502-930, A
Real-time operating system RTOS
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