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BUZ103S

Description
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
CategoryDiscrete semiconductor    The transistor   
File Size84KB,8 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BUZ103S Overview

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)

BUZ103S Parametric

Parameter NameAttribute value
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)31 A
Maximum drain-source on-resistance0.04 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1
BUZ 103 S
SPP31N05
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• d
v
/d
t
rated
• 175°C operating temperature
• also in SMD available
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
55 V
I
D
31 A
R
DS(on
)
0.04
Package
Ordering Code
BUZ 103 S
TO-220 AB
Q67040-S4009-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
A
31
22
Pulsed drain current
T
C
= 25 °C
I
Dpuls
124
E
AS
Avalanche energy, single pulse
I
D
= 31 A,
V
DD
= 25 V,
R
GS
= 25
L
= 291 µH,
T
j
= 25 °C
mJ
140
I
AR
E
AR
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Reverse diode d
v
/d
t
I
S
= 31 A,
V
DS
= 40 V, d
i
F
/d
t
= 200 A/µs
T
jmax
= 175 °C
31
7.5
A
mJ
kV/µs
d
v
/d
t
6
V
GS
P
tot
Gate source voltage
Power dissipation
T
C
= 25 °C
±
20
75
V
W
Semiconductor Group
1
30/Jan/1998
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