INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC2433
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
V
(BR)CEO
= 120V(Min)
·High
Current Capability
·Wide
Area of Safe Operation
·Complement
to Type 2SA1043
APPLICATIONS
·Power
switching applications
·High
frequency power amplifier
·Switching
regulators
·DC-DC
converters
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
30
A
I
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
10
A
P
C
150
W
T
J
175
℃
T
stg
Storage Temperature Range
-65~175
℃
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= 10mA; R
BE
=
∞
I
C
= 50μA; I
E
= 0
I
E
= 1mA ; I
C
= 0
I
C
= 15A; I
B
= 1.5A
I
C
= 15A; I
B
= 1.5A
V
CB
= 120V ; I
E
= 0
V
CE
= 120V ; I
E
= 0
V
EB
= 4V; I
C
= 0
I
C
= 3A ; V
CE
= 5V
I
C
= 30A ; V
CE
= 5V
I
E
= 0; V
CB
= -10V; f= 1.0MHz
I
C
= 2A ; V
CE
= 10V
35
7
MIN
120
120
5
2SC2433
TYP.
MAX
UNIT
V
V
V
1.5
2.0
50
1
50
200
V
V
μA
mA
μA
1000
60
pF
MHz
Switching Times
t
r
t
stg
t
f
Rise Time
Storage Time
Fall Time
I
C
= -15A; I
B1
= -I
B2
= -1.5A;
R
L
= 2Ω
0.10
0.10
0.10
μs
μs
μs
isc website：www.iscsemi.cn
2
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