INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
2SK566
FEATURES
·Drain
Current
–I
D
=2.9A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 800V(Min)
·Fast
Switching Speed
DESCRIPTION
·Designed
especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
D
T
J
T
stg
PARAMETER
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Total Dissipation @T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature
VALUE
800
±20
2.9
78
150
-55~150
UNIT
V
V
A
W
℃
℃
isc website：www.iscsemi.cn
PDF pdfFactory Pro
1
isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBO
L
V
(BR)DSS
PARAMETER
CONDITIONS
MIN
TYP
2SK566
MAX
UNIT
Drain-Source Breakdown Voltage
V
GS
= 0; I
D
= 0.25mA
800
V
V
GS
(th
)
R
DS(
on
)
I
GSS
Gate Threshold Voltage
V
DS
= V
GS
; I
D
= 1mA
2.1
4.0
V
Ω
Drain-Source On-Resistance
V
GS
= 10V; I
D
= 1.5A
V
GS
=
±20V;V
DS
= 0
3.5
4.0
±100
Gate-Body Leakage Current
nA
μA
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 800V; V
GS
=0
250
V
SD
Forward On-Voltage
I
S
= 2.9A; V
GS
=0
1.05
1.3
V
tr
Rise time
40
60
ns
ton
Turn-on time
VGS=10V;ID=2.1A;
RL=50Ω
70
105
ns
tf
Fall time
60
80
ns
toff
Turn-off time
170
220
ns
·
isc website：www.iscsemi.cn
PDF pdfFactory Pro
2
isc & iscsemi is registered trademark
www.fineprint.cn
Embedded System
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