BUZ11S2 datasheet, PDF - EEWORLD Datasheet

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BUZ11S2: DescriptionSIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated); CategoryDiscrete semiconductor The transistor; File Size106KB，9 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BUZ11S2 Overview

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ11S2 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SIEMENS
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	14 mJ
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	30 A
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.04 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	250 pF
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	75 W
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	120 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	270 ns
Maximum opening time (tons)	110 ns

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BUZ 11 S2

Not for new design

SIPMOS

Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1

Pin 2

Pin 3

Type

BUZ 11 S2

60 V

30 A

DS(on)

0.04

Ω

Package

TO-220 AB

Ordering Code

C67078-S1301-A5

Maximum Ratings

Parameter

Continuous drain current

Symbol

Values

Unit

Dpuls

120

= 29 °C

Pulsed drain current

= 25 °C

Avalanche current,limited by

jmax

Avalanche energy,periodic limited by

jmax

Avalanche energy, single pulse

1.9

= 30 A,

= 25 V,

= 25

Ω

= 15.6 µH,

= 25 °C

Gate source voltage

Power dissipation

tot

= 25 °C

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

stg

thJC

thJA

-55 ... + 150

≤

1.67

≤

55 / 150 / 56

°C

K/W

Semiconductor Group

07/96

BUZ11S2 Related Products

	BUZ11S2	C67078-S1301-A5
Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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