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BUZ12A

Description
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
CategoryDiscrete semiconductor    The transistor   
File Size108KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BUZ12A Overview

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ12A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)41 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)33 A
Maximum drain current (ID)42 A
Maximum drain-source on-resistance0.035 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)420 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment125 W
Maximum power dissipation(Abs)75 W
Maximum pulsed drain current (IDM)168 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)460 ns
Maximum opening time (tons)180 ns
Base Number Matches1
BUZ 12 A
Not for new design
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 12 A
V
DS
50 V
I
D
42 A
R
DS(on)
0.035
Package
TO-220 AB
Ordering Code
C67078-S1331-A3
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
42
Unit
A
I
D
I
Dpuls
168
T
C
= 44 °C
Pulsed drain current
T
C
= 25 °C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
AR
E
AR
E
AS
42
2.5
mJ
I
D
= 42 A,
V
DD
= 25 V,
R
GS
= 25
L
= 23.2 µH,
T
j
= 25 °C
Gate source voltage
Power dissipation
41
V
GS
P
tot
±
20
125
V
W
T
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
1
75
E
55 / 150 / 56
°C
K/W
Semiconductor Group
07/96
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