SIPMOS
®
Power Transistor
BUZ 20
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on
)
Package
Ordering Code
BUZ 20
100 V
13.5 A
0.2
Ω
TO-220 AB
C67078-S1302-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
D
13.5
A
T
C
= 28 ˚C
Pulsed drain current
I
Dpuls
54
T
C
= 25 ˚C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
AR
E
AR
E
AS
13.5
7.9
mJ
I
D
= 13.5 A,
V
DD
= 25 V,
R
GS
= 25
Ω
L
= 486 µH,
T
j
= 25 ˚C
Gate source voltage
Power dissipation
59
V
GS
P
tot
±
20
75
V
W
T
C
= 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
˚C
≤
1.67
75
E
55 / 150 / 56
K/W
Data Sheet
1
05.99
BUZ 20
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
V
(BR)DSS
100
-
-
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 ˚C
Gate threshold voltage
V
GS(th)
2.1
3
4
µA
-
-
0.1
10
1
100
nA
-
10
100
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 125 ˚C
Gate-source leakage current
I
GSS
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-resistance
R
DS(on)
-
0.17
0.2
Ω
V
GS
= 10 V,
I
D
= 8.5 A
Data Sheet
2
05.99
BUZ 20
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Values
typ.
max.
Unit
Transconductance
g
fs
3
4.7
-
S
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 8.5 A
Input capacitance
C
iss
-
400
530
pF
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
C
oss
-
120
180
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
70
105
ns
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
Rise time
-
10
15
t
r
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
Turn-off delay time
-
45
70
t
d(off)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
Fall time
-
55
75
t
f
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
-
40
55
Data Sheet
3
05.99
BUZ 20
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Values
typ.
max.
Unit
Inverse diode continuous forward current
I
S
-
-
13.5
A
T
C
= 25 ˚C
Inverse diode direct current,pulsed
I
SM
-
-
54
V
-
1.4
1.6
ns
-
170
-
µC
-
0.3
-
T
C
= 25 ˚C
Inverse diode forward voltage
V
SD
V
GS
= 0 V,
I
F
= 27 A
Reverse recovery time
t
rr
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Reverse recovery charge
Q
rr
V
R
= 30 V,
I
F=
l
S,
di
F
/dt = 100 A/µs
Data Sheet
4
05.99
BUZ 20
Power dissipation
P
tot
=
ƒ
(T
C
)
Drain current
I
D
=
ƒ
(T
C
)
parameter:
V
GS
≥
10 V
14
A
80
W
12
P
tot
I
D
60
11
10
9
8
50
40
7
6
30
5
4
20
3
2
1
0
0
10
0
0
20
40
60
80
100
120
˚C
160
20
40
60
80
100
120
˚C
160
T
C
T
C
Safe operating area
I
D
=
ƒ
(V
DS
)
parameter:
D
= 0.01,
T
C
= 25˚C
10
2
tp
= 16.0µs
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
1
K/W
A
=
DS
/
I
D
I
D
10
1
V
100 µs
Z
thJC
10
0
R
DS
(o
n)
1 ms
10
-1
10 ms
D = 0.50
0.20
10
0
DC
10
-2
0.10
0.05
0.02
single pulse
0.01
10
-1
0
10
10
1
V 10
2
10
-3
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
V
DS
t
p
Data Sheet
5
05.99
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