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LTVS20H5.0T5G

Description
VRWM (V):5, VBR (V) Min:6, IR @VRWM (μA):2, VC @IPP (V):18, IPP tp=8/20μs (A):200
CategoryDiscrete semiconductor    diode   
File Size241KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LTVS20H5.0T5G Overview

VRWM (V):5, VBR (V) Min:6, IR @VRWM (μA):2, VC @IPP (V):18, IPP tp=8/20μs (A):200

LTVS20H5.0T5G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid8320612965
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
VRWM (V)5
VBR (V) Min6
IR @VRWM (μA)2
CJ (pF)-
VC @IPP (V)18
IPP tp=8/20μs (A)200
Power tp=8/20μs (WATT)2800
StyleE
PackageDFN2020-3
Secondary categoryESD PROTECTION
Level 3 categoryESD/Surge Protection
LESHAN RADIO COMPANY, LTD.
LTVS20H5.0T5G
Features
5V uni-directional ESD diode
Low clamping voltage
Complies with IEC 61000-4-2 standards:
Air discharge: ±30kV
LTVS20H5.0T5G
DFN2020-3
Contact discharge: ±30kV
RoHS Compliant
3
CATHODE
1,2
ANODE
Ordering information
Device
Marking
Packing
LTVS20H5.0T5G
5A
DFN2020-3
Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Parameter
Peak Pulse Power (8/20µs)
Peak Pulse Current (8/20µs)
Operating Temperature Range
Storage Temperature Range
Symbol
Ppk
I
PP
T
J
Tstg
Value
2800
200
−55 to +125
−55 to +150
Unit
W
A
°C
°C
Electrical Characteristics (T
A
=25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Clamping Voltage
Clamping Voltage
Symbol
V
RWM
V
BR
I
R
V
F
V
C
V
C
Min
Typ
Max
5
Unit
V
V
µA
V
V
V
Test Condition
6
7.8
2
I
T
= 1mA
V
R
= 5V
I
F
= 10mA
I
PP
= 20A (8 x 20µs pulse)
I
PP
= 150A (8 x 20µs pulse)
0.7
1.2
8.5
1
8
Note: Electrical parameters are only for die, performance may alter after assembly.
Oct.,2017
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